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Metal oxide thin film transistor, preparation method thereof and array substrate

A technology of oxide thin film and oxide semiconductor, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of low stability and low mobility of BCE type oxide thin film transistors, so as to improve stability, Effect of increasing carrier mobility and increasing concentration

Pending Publication Date: 2021-12-17
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The BCE type oxide thin film transistor with this structure has the defects of low mobility and low stability

Method used

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  • Metal oxide thin film transistor, preparation method thereof and array substrate
  • Metal oxide thin film transistor, preparation method thereof and array substrate
  • Metal oxide thin film transistor, preparation method thereof and array substrate

Examples

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Embodiment Construction

[0049] An example embodiment will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be implemented in a variety of forms, and should not be construed as being limited to the examples described herein; in contrast, the present disclosure will make the present disclosure more comprehensive and complete, and to comprehensively convey the concept of example embodiments. A technician to those skilled in the art. The features, structures, or characteristics described may be incorporated in one or more embodiments in any suitable manner. In the following description, there is provided a number of specific details to give sufficient understanding of the embodiments of the present disclosure.

[0050] In the figure, the thickness of the region and the layer may be exaggerated for clarity. The same reference numerals are denoted by the same or similar structures, and thus, therefore will be omitted in detail.

[0051] The feature...

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Abstract

The invention provides a metal oxide thin film transistor, a preparation method thereof and an array substrate, and belongs to the technical field of display. The metal oxide thin film transistor comprises a grid electrode, a grid electrode insulating layer, an active layer and a source-drain metal layer which are stacked on one side of a back plate; the active layer and the gate are respectively arranged on two sides of the gate insulating layer, and the source-drain metal layer is arranged on one side, far away from the back plate, of the active layer; and the active layer comprises a first metal oxide semiconductor layer and a second metal oxide semiconductor layer which are sequentially stacked on the side, away from the grid electrode, of the grid electrode insulating layer, wherein the carrier concentration in the first metal oxide semiconductor layer is greater than 1 * 10 < 20 > / cm < 3 >, the Hall mobility of carriers in the first metal oxide semiconductor layer is greater than 20 cm < 2 > / (V.s), and the total atomic percentage content of indium and zinc in the first metal oxide semiconductor layer is greater than 40%. The metal oxide thin film transistor can improve carrier mobility and stability.

Description

Technical field [0001] The present disclosure relates to the field of display, and more particularly to a metal oxide thin film transistor and a preparation method thereof, an array substrate. Background technique [0002] The oxide thin film transistor has the advantages of good uniformity such that it has good application prospects in terms of high-lead panels, large size display. The BCE (backgapper etch) type oxide thin film transistor is a commonly used oxide thin film transistor structure, which is typically a single layer high mobility oxide semiconductor structure. This structure of the BCE type oxide thin film transistor has a defect with low mobility and low stability of stability. [0003] The above information disclosed in the background technology is only used to enhance the background understanding of the present disclosure, and therefore it may include information that does not constitute a prior art known to those of ordinary skill in the art. Inventive content ...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/10H01L27/12H01L21/34
CPCH01L29/7869H01L29/78693H01L29/78696H01L29/1054H01L29/66969H01L27/1225H01L21/02565H01L21/02631H01L21/02488H01L21/02483H01L21/02505H01L21/02164H01L21/02211H01L21/02271G02F1/133345G02F1/1368H01L21/443H01L29/24H01L29/4908
Inventor 贺家煜宁策李正亮胡合合黄杰赵坤姚念琦
Owner BOE TECH GRP CO LTD
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