A kind of growth method of GaN epitaxial wafer and epitaxial wafer

Abstract

The invention discloses a gallium nitride epitaxial wafer and a method for growing the epitaxial wafer, comprising: a substrate layer, a buffer layer, a polycrystalline gallium nitride layer, a superlattice buffer layer, a single crystal gallium nitride layer and a gallium nitride layer Epitaxial wafer, using sapphire as the substrate layer, growing a buffer layer on the substrate layer, growing a polycrystalline gallium nitride layer on the buffer layer, growing a superlattice buffer layer on the polycrystalline gallium nitride layer, and growing a superlattice buffer layer on the superlattice buffer layer grow a single crystal gallium nitride layer on the single crystal gallium nitride layer, the thickness of the single crystal gallium nitride layer is greater than the thickness of the polycrystalline gallium nitride layer and the thickness of the superlattice buffer layer, and finally grow the nitride layer on the single crystal gallium nitride layer gallium epitaxial layer. The present invention adopts buffer layer and polycrystalline gallium nitride layer to release the stress from lattice mismatch. The superlattice buffer layer can not only buffer the stress, but also improve the lattice quality. The single crystal gallium nitride layer can mention nitrogen The quality of the gallium nitride epitaxial wafer is reduced, and the dislocation density is reduced, thereby forming a high-quality gallium nitride epitaxial layer.

Description

Technical field [0001] The present invention relates to the field of semiconductor, and more particularly to a gallium nitride epitaxial sheet and a growth method of its epitaxial sheet. Background technique [0002] As the preparation of the gallium nitride epitaxial sheet is mainly carried out from the epitaxial epitaxial growth gallium nitride from sapphire, the conventional buffer layer is formed, and the buffer layer is formed, and the outer sheet and liner can be buffered. The stress between the bottom, but due to the lattice mismatch of the gallium nitride and sapphire substrate, it produces only a layer of buffer layer and cannot completely buffer stress, due to the presence of stress, the epitaxial sheet The song; on the other hand, a single buffer layer Aln or AlGaN is not high, and the structure of the epitaxial sheet is also required to further optimize the structure of the epitaxial sheet to form a high quality epitaxial structure. [0003] In summary, how to generat...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a gallium nitride epitaxial wafer and a method for growing the epitaxial wafer, which has solved the problem of low quality of the gallium nitride epitaxial wafer prepared by only one layer of buffer layer in the prior art

Images