Electroluminescent perovskite long-afterglow material, LED prepared from electroluminescent perovskite long-afterglow material and LED preparation method
A technology of electroluminescence and perovskite, applied in the direction of luminescent materials, chemical instruments and methods, circuits, etc., to achieve the effect of maintaining brightness stability
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Embodiment 1
[0053] figure 1 The structure of the electroluminescent perovskite long afterglow LED provided by Embodiment 1 of the present invention is shown.
[0054] Such as figure 1 As shown, the electroluminescent perovskite long afterglow LED provided in Example 1 of the present invention includes: a cathode 2, an electron transport layer 3, a perovskite afterglow luminescent layer 4, and a spacer prepared sequentially on a substrate 1 from bottom to top. The hole transport layer 5 and the anode 6; wherein, the two ends of the anode 6 and the cathode 2 are respectively connected to a pulsed AC power supply.
[0055] The invention uses pulsed alternating current to drive the electroluminescent perovskite long afterglow LED, suppresses ion migration, and improves the working performance and stability of the LED. The waveform of the driving signal driven by pulsed alternating current is as follows: image 3 shown.
[0056] In a specific embodiment of the present invention, the substr...
Embodiment 2
[0088] Figure 4 The structure of the electroluminescent perovskite long afterglow LED provided by the embodiment 2 of the present invention is shown.
[0089] Such as Figure 4 As shown, the electroluminescence type perovskite long afterglow LED provided in Example 2 of the present invention includes: an anode 6 ′, a hole transport layer 5 ′, a perovskite afterglow luminescence and layer 4`, electron transport layer 3` and cathode 2`; wherein, the two ends of the anode 6` and the cathode 2` are respectively connected to the pulsed AC power supply, and the perovskite afterglow light-emitting layer uses the electroluminescent perovskite long afterglow material Prepared.
[0090] The structure of substrate 1', cathode 2', electron transport layer 3', perovskite afterglow luminescent layer 4', hole transport layer 5' and anode 6' in embodiment 2 is the same as that of substrate 1 and cathode 2 in embodiment 1. , the electron transport layer 3, the perovskite afterglow luminesc...
Embodiment 3
[0102] CsPbBr 3 For example, the doped rare earth element is La, and La is mixed with CsPbBr 3 CsLaPbBr 3 .
[0103] Such as Figure 6 As shown, after the introduction of La, Pb shifts to a lower binding energy, indicating that La combines with Pb, and the replacement part Cs occupies the A site, Figure 7 It can be seen that the introduction of La ions promotes the CsLaPbBr 3 The nucleation of CsLaPbBr 3 particle size is limited.
[0104] Such as Figure 8 As shown, when the device is applied with alternating current, CsLaPbBr 3 The half-height width of CsPbBr is significantly higher than that of CsPbBr 3 The half-height width, indicating that CsLaPbBr 3 The device has a long afterglow characteristic.
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