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In-situ PN structure gallium oxide power diode and production method thereof

A technology of power diodes and gallium oxide, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as large thermal field emission current, improve breakdown voltage, improve interface characteristics, and reduce reverse leakage current Effect

Pending Publication Date: 2022-01-21
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In recent years, many scholars have begun to study β-Ga 2 o 3 However, there is still a large gap between the breakdown field strength of the device and the theoretical limit, and at the same time, the thermal field emission current (TFE leakage current) is still very large

Method used

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  • In-situ PN structure gallium oxide power diode and production method thereof
  • In-situ PN structure gallium oxide power diode and production method thereof
  • In-situ PN structure gallium oxide power diode and production method thereof

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Embodiment 1

[0037] See figure 1 , figure 1 It is a flowchart of a method for preparing an in-situ PN structure gallium oxide power diode provided by an embodiment of the present invention. As shown in the figure, the method for preparing an in-situ PN structure gallium oxide power diode in this embodiment includes:

[0038] S1: select the substrate layer, and prepare a drift layer on the upper surface of the substrate layer;

[0039] In this embodiment, optionally, Si or Sn heavily doped β-Ga 2 o 3 As the substrate layer, Si or Sn heavily doped β-Ga 2 o 3 A layer of Si or Sn lightly doped β-Ga is grown on the substrate 2 o 3 as a floating layer.

[0040] In this embodiment, the doping concentration of the drift layer is lower than that of the substrate layer.

[0041] Optionally, the doping concentration of the substrate layer is 5×10 18 cm -3 -5×10 19 cm -3 .

[0042] Optionally, the thickness of the drift layer is 2-14 μm, and the doping concentration is 1×10 15 cm -3 -1×...

Embodiment 2

[0059] See Figure 2a-Figure 2e , Figure 2a-Figure 2e It is a flow chart of the preparation process of an in-situ PN structure gallium oxide power diode provided by the embodiment of the present invention; this embodiment specifically describes the preparation method of the in-situ PN structure gallium oxide power diode in the first embodiment.

[0060] 1. Preparation of gallium oxide power diodes with a drift layer thickness of 2 μm

[0061] Step 1. Select a substrate layer, and prepare a drift layer on the upper surface of the substrate layer.

[0062] Choose heavily Si-doped β-Ga 2 o 3 As the substrate layer, the doping concentration is 5×10 18 cm -3 , in Si heavily doped β-Ga 2 o 3 Above, using the HVPE process, epitaxially grow a layer of Si lightly doped β-Ga 2 o 3 layer as a drift layer, where the thickness of the drift layer is 2 μm, and the doping concentration of the drift layer is 1×10 15 cm -3 ,Such as Figure 2a shown.

[0063] Step 2. Cathode electr...

Embodiment 3

[0094] This embodiment provides an in-situ PN structure gallium oxide power diode, please refer to image 3 , image 3It is a schematic structural diagram of an in-situ PN structure gallium oxide power diode provided by an embodiment of the present invention. As shown in the figure, the bit PN structure gallium oxide power diode of this embodiment includes: a cathode 1, a substrate layer 2, and a drift layer 3 and anode 4. Among them, the cathode 1, the substrate layer 2 and the drift layer 3 are stacked sequentially from bottom to top; the upper surface of the drift layer 3 is etched to form a number of nano-channel structures 301; the anode 4 is arranged on the drift layer 3, and the nano-channel structure The bottom and inner wall of 301; the anode 4 is a Ni / Au metal stack, and the NiO layer 5 with P-type characteristics is formed at the interface between the metal Ni and the drift layer 3, and the NiO layer 5 and the drift layer 3 form a heterogeneous PN junction structur...

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Abstract

The invention relates to an in-situ PN structure gallium oxide power diode and a production method thereof. The method comprises the steps: selecting a substrate layer, and preparing a drift layer on the upper surface of the substrate layer; preparing a cathode on the lower surface of the substrate layer; etching the drift layer to form a plurality of nano channel structures; preparing an anode on the upper surface of the drift layer; and performing low-temperature annealing process treatment on the device to obtain a gallium oxide power diode, wherein the substrate layer and the drift layer are both made of Si or Sn doped beta-Ga2O3 materials, the doping concentration of the drift layer is lower than that of the substrate layer, the anode is a Ni / Au metal laminated layer, a NiO layer with P-type characteristics is formed at the interface of metal Ni and the drift layer, and the NiO layer and the drift layer form a heterogeneous PN junction structure. According to the production method, the thin NiO layer with the P-type characteristic is formed through low-temperature annealing, the thin NiO layer and beta-Ga2O3 can form a heterogeneous PN junction structure, a reverse leakage current can be reduced, the breakdown voltage of the device can be improved, and the nano channel structure has a three-dimensional modulation effect so that electric field distribution is modulated.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to an in-situ PN structure gallium oxide power diode and a preparation method thereof. Background technique [0002] Due to β-Ga 2 o 3 Crystal materials have ultra-wide band gap and high breakdown field strength, therefore, β-Ga 2 o 3 It has the potential to manufacture high withstand voltage, high power, and low loss power devices, and can be applied in the field of high voltage and high power. In recent years, many scholars have begun to study β-Ga 2 o 3 However, there is still a large gap between the breakdown field strength of the device and the theoretical limit, and at the same time, the thermal field emission current (TFE leakage current) is still very large. Contents of the invention [0003] In order to solve the above-mentioned problems in the prior art, the present invention provides an in-situ PN structure gallium oxide power diode...

Claims

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Application Information

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IPC IPC(8): H01L21/34H01L29/861H01L29/24
CPCH01L21/34H01L29/66969H01L29/861H01L29/24
Inventor 何云龙马晓华陆小力郑雪峰张方洪悦华王当坡郝跃
Owner XIDIAN UNIV
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