In-situ PN structure gallium oxide power diode and production method thereof

A technology of power diodes and gallium oxide, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as large thermal field emission current, improve breakdown voltage, improve interface characteristics, and reduce reverse leakage current Effect

Pending Publication Date: 2022-01-21
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In recent years, many scholars have begun to study β-Ga 2 o 3 However, there is still a large gap between the breakdown field strength o

Method used

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  • In-situ PN structure gallium oxide power diode and production method thereof
  • In-situ PN structure gallium oxide power diode and production method thereof
  • In-situ PN structure gallium oxide power diode and production method thereof

Examples

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Example Embodiment

[0036] Example one

[0037] See figure 1 , figure 1 It is a flow chart of an in-situ PN structure gallium oxide power diode provided by the embodiment of the present invention, as shown, the preparation method of the inner PN structure gallium oxide power diode of the present embodiment, including:

[0038] S1: Select the substrate layer to prepare a drift layer on the upper surface of the substrate layer;

[0039] In the present embodiment, β-Ga-Ga-doped β-Ga is selected for Si or Sn-doped 2 O 3 As the substrate layer, β-Ga recombinated with HVPE (Hydride Vapor Phase Epitaxy, hydride gas phase epitaxy) 2 O 3 Top of a layer of Si or Sn is slightly doped to be lowered above the substrate. 2 O 3 As the drift layer.

[0040] In the present embodiment, the doping concentration of the drift layer is lower than the doping concentration of the substrate layer.

[0041] Alternatively, the doping concentration of the substrate layer is 5 × 10 18 cm -3 -5 × 10 19 cm -3 .

[0042] Alternativ...

Example Embodiment

[0058] Example 2

[0059] See Figure 2A-Figure 2E , Figure 2A-Figure 2E It is a process diagram of a preparation process of a primary PN structure gallium oxide power diode according to an embodiment of the present invention; the present embodiment will provide a detailed description of the preparation method of the in-situ PN structure gallium oxide power diode of the first example.

[0060] 1. Preparation of gallium oxide power diodes having a thickness of 2 μm in a drift layer

[0061] Step 1. Select the substrate layer to prepare a drift layer on the surface of the substrate layer.

[0062] Select Si-doped β-Ga 2 O 3 As the substrate layer, the doping concentration is 5 × 10 18 cm -3 , Β-Ga, which is doped in Si 2 O 3 Above, the HVPE process is used, the epitaxial growth layer Si lightly doped β-Ga 2 O 3 The layer is a drift layer, wherein the drift layer has a thickness of 2 μm, and the doping concentration of the drift layer is 1 × 10 15 cm -3 ,like Figure 2A Indicated.

[0...

Example Embodiment

[0093] Example three

[0094] This embodiment provides an in-situ PN structure gallium oxide power diode, please see image 3 , image 3It is a schematic structural diagram of a primary PN structure gallium oxide power diode according to an embodiment of the present invention, as shown, the bit PN structure gallium oxide power diode, including: cathode 1, substrate layer 2, drift layer 3 and the anode 4. Among them, the cathode 1, the substrate layer 2 and the drift layer 3 are stacked by bottom, and the upper surface of the drift layer 3 is etched to form a plurality of nanometer channel structures 301; the anode 4 is disposed on the drift layer 3, and the rice channel structure The bottom and inner wall of 301; the anode 4 is a Ni / Au metal laminate, and the metal Ni is formed at the interface of the drift layer 3, and the NiO layer 5 having a p-type feature is formed to form a heterogeneous PN junction structure.

[0095] In the present embodiment, the substrate layer 2 and the ...

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Abstract

The invention relates to an in-situ PN structure gallium oxide power diode and a production method thereof. The method comprises the steps: selecting a substrate layer, and preparing a drift layer on the upper surface of the substrate layer; preparing a cathode on the lower surface of the substrate layer; etching the drift layer to form a plurality of nano channel structures; preparing an anode on the upper surface of the drift layer; and performing low-temperature annealing process treatment on the device to obtain a gallium oxide power diode, wherein the substrate layer and the drift layer are both made of Si or Sn doped beta-Ga2O3 materials, the doping concentration of the drift layer is lower than that of the substrate layer, the anode is a Ni/Au metal laminated layer, a NiO layer with P-type characteristics is formed at the interface of metal Ni and the drift layer, and the NiO layer and the drift layer form a heterogeneous PN junction structure. According to the production method, the thin NiO layer with the P-type characteristic is formed through low-temperature annealing, the thin NiO layer and beta-Ga2O3 can form a heterogeneous PN junction structure, a reverse leakage current can be reduced, the breakdown voltage of the device can be improved, and the nano channel structure has a three-dimensional modulation effect so that electric field distribution is modulated.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to an in-situ PN structure gallium oxide power diode and a preparation method thereof. Background technique [0002] Due to β-Ga 2 o 3 Crystal materials have ultra-wide band gap and high breakdown field strength, therefore, β-Ga 2 o 3 It has the potential to manufacture high withstand voltage, high power, and low loss power devices, and can be applied in the field of high voltage and high power. In recent years, many scholars have begun to study β-Ga 2 o 3 However, there is still a large gap between the breakdown field strength of the device and the theoretical limit, and at the same time, the thermal field emission current (TFE leakage current) is still very large. Contents of the invention [0003] In order to solve the above-mentioned problems in the prior art, the present invention provides an in-situ PN structure gallium oxide power diode...

Claims

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Application Information

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IPC IPC(8): H01L21/34H01L29/861H01L29/24
CPCH01L21/34H01L29/66969H01L29/861H01L29/24
Inventor 何云龙马晓华陆小力郑雪峰张方洪悦华王当坡郝跃
Owner XIDIAN UNIV
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