Thin-film solar cell and method of making the same

A technology of solar thin film and manufacturing method, which is applied in the direction of circuits, electrical components, photovoltaic power generation, etc., can solve the problems of increasing environmental burdens, achieve the effects of improving photoelectric conversion efficiency, reducing Cl content, and reducing the doping amount of group V elements

Active Publication Date: 2022-03-11
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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Problems solved by technology

Therefore, it is necessary to use weak acid solution corrosion to remove surface oxides, but this method of removing surface oxides will produce wastewater containing heavy metals, which increases the environmental burden

Method used

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  • Thin-film solar cell and method of making the same
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Embodiment Construction

[0028] figure 1 It is a schematic diagram of a solar thin film cell with a top liner structure in the prior art. like figure 1 As shown in the figure, the solar thin film cell has a top liner structure, that is, a TCO layer, a window layer, a light absorption layer (including CdTe) and a metal layer are sequentially formed on the substrate during fabrication. The specific production process includes:

[0029] 1) Fabricate the TCO layer on the substrate;

[0030] 2) Make a window layer on the TCO layer;

[0031] 3) depositing CdTe on the window layer to form a light absorbing layer;

[0032] 4) After the light absorption layer is formed, CdCl 2 post-processing;

[0033] 5) Weak acid etching to remove the oxide layer on the light absorption layer;

[0034] 6) Deposit a metal layer as the back electrode.

[0035] In this process flow, the CdCl after the formation of the light absorbing layer containing CdTe 2 The post-processing process is to obtain high photoelectric co...

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Abstract

The application discloses a solar thin film battery and a manufacturing method thereof, which relate to the field of photovoltaic technology. The preparation method of the embodiment of the present application adopts a substrate structure, that is, a metal layer, a light absorbing layer, a window layer and a TCO layer are sequentially formed on a substrate. The doping of group V elements in the light absorbing layer can increase the hole concentration, which is beneficial to improve the photoelectric conversion efficiency. Moreover, in the manufacturing method of the embodiment of the present application, there is no need to use a weak acid solution to remove the oxide layer, which reduces the discharge of waste water containing Cd or other group V elements, and the manufacturing process is more environmentally friendly. In addition, due to the use of the substrate structure, CdCl 2 When activated, Cl diffuses from the window layer to the CdTe layer and the CdTe:V layer sequentially, which can reduce the Cl content of the CdTe:V layer, and reduce the doping amount of group V elements caused by Cl diffusion to a certain extent.

Description

technical field [0001] The present application relates to the field of photovoltaic technology, in particular, to a thin-film solar cell and a method for making the same. Background technique [0002] The existing cadmium telluride solar thin film cell adopts a top liner structure, that is, a TCO, a window layer, a light absorption layer, and a metal layer are sequentially deposited on the substrate. Among them, there is CdTe in the light absorption layer, and the existing cadmium telluride battery needs to use CdCl 2 post-processing to obtain high photoelectric conversion efficiency. in CdCl 2 After post-processing, a Te-rich layer is formed on the surface of CdTe, which is very easily oxidized, and a reverse junction is formed between the metal layer and CdTe, which hinders the movement of carriers. Therefore, it is necessary to use a weak acid solution corrosion method to remove surface oxides, but this method of removing surface oxides will generate wastewater contain...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0296H01L31/0445
CPCH01L31/1836H01L31/0445H01L31/02963Y02E10/50Y02P70/50
Inventor 唐茜傅干华蒋猛潘锦功彭寿
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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