Preparation method of semiconductor packaging substrate

Abstract

The invention discloses a preparation method of a semiconductor packaging substrate. The method comprises the following steps: providing a core board, and forming a metal layer on the surface of the core board; forming a first resistance layer on the metal layer, and forming a plurality of first openings in the first resistance layer; forming a metal column in the first barrier layer, and removing the first barrier layer; forming a second resistance layer on the metal column, and forming a plurality of second openings in the second resistance layer; forming a first circuit layer in the second opening, removing the second resistance layer, forming a dielectric layer on the first circuit layer, and forming a plurality of third openings in the dielectric layer; forming a third resistance layer on the dielectric layer, and forming a plurality of fourth openings in the third resistance layer; forming a second circuit layer in the third opening; and removing the core board and the metal layer, and welding a chip on the metal column. The material of the metal column is changed from electroplating soldering tin to nickel gold, so that the bonding property of the metal column is improved, the production yield and the production efficiency of the substrate are improved, and the production cost is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of PCB boards, in particular to a method for preparing a semiconductor package substrate. Background technique [0002] In the existing packaging substrate preparation process, it is necessary to prepare a core substrate first, and then form a dielectric layer and a circuit layer on the core substrate. This technology has the problems of low wiring density, many layers, long wires and high impedance. For high frequency The substrate is difficult to apply; and because of the large number of stacked layers, the process steps are also more complicated; and the material used in the metal pillars formed in the preparation process is electroplated solder, so that in the process of forming the metal pillars, the difference between electroplated solder and electroplated copper If the binding force is not enough, it is easy to separate when heated in the subsequent substrate preparation process, which greatly reduces...

AI Technical Summary

Problems solved by technology

[0002] In the existing packaging substrate preparation process, it is necessary to prepare a core substrate first, and then form a dielectric layer and a circuit layer on the core substrate. This technology has the problems of low wiring density, many layers, long wires and high impedance. For high frequency The substrate is difficult to apply; and because of the large number of stacked layers, the process steps are also more complicated; and the material used in the metal pillars formed in the preparation process is electroplated solder, so that in the process of forming the metal pillars, the difference between electroplated solder and electroplated copper Insufficient binding force, easy to separate when heated in the subsequent substrate preparation process, greatly reducing the molding yield of the substrate, increasing production costs, and reducing production efficiency

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