Ionic two-end bionic memristor and preparation method thereof

Abstract

The invention discloses an ionic two-end bionic memristor and a preparation method thereof. The ionic two-end bionic memristor device comprises a substrate, bottom electrodes which are formed on the substrate, are arranged in parallel along a first direction at certain intervals and serve as one end of the memristor, ionic gel which is formed on the bottom layer electrode and serves as a functional layer of the memristor, and top electrodes which are formed on the ionic gel, are arranged in parallel along a second direction at certain intervals, are in a cross array structure with the bottom electrodes, and serve as the other end of the memristor, wherein two ends of the memristor respectively correspond to a synaptic front end and a synaptic rear end, a functional layer of the memristor corresponds to a synaptic gap, ion migration in brain-like nerve synapses is simulated by utilizing diffusibility of ions in the ionic gel, information transmission of a conductive channel is realized, an ion channel effect in a similar organism is simulated, and a nerve synapse weight modulation process is completed.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, and more particularly to a bionic resentment device and a preparation method thereof thereof in an ion type. Background technique [0002] With the development of Moore's law, the demand for novel scale micro-shrinkable storage devices is increasing. The memory of the two-end structure has the advantages of CMOS process compatibility, simple structure, fast operating speed, low power consumption, easy to miniature and high density integration, and is ideal for applications of electronic devices. [0003] As the basic components calculated by the cerebral neurological morphology, the neurotactic device can break the bottleneck of the traditional calculation system from the architecture, and improve the calculation energy efficiency of the chip and have received extensive attention. Neural synaptic components need to be adjusted to the syntarians, thereby completing the computational mode...

AI Technical Summary

Problems solved by technology

Although some three-terminal ionic transistor neurosynaptic devices have been developed, it is difficult to meet the needs of high-density integration due to factors such as the minimum unit size and integration density, and there is an urgent need to develop new bionic synapse devices.

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