Semiconductor device
A semiconductor and electrode layer technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problem of dielectric film insulation breakdown strength reduction, and achieve the effect of suppressing the reduction of insulation breakdown strength
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no. 1 approach ＞
[0068] [structure]
[0069] figure 1 It is a diagram schematically showing a cross section of the semiconductor device according to the first embodiment of the present disclosure. figure 2 yes figure 1 Enlarged view of part A. Such as figure 1 and figure 2 As shown, the semiconductor device 1 includes: a semiconductor substrate 10 having a first main surface 11 and a second main surface 12 facing each other, a dielectric film 20 arranged on a part of the first main surface 11 , and a dielectric film 20 arranged on the dielectric film 20 Part of the first electrode layer 30 (on the side opposite to the first main surface 11 ) and the protective layer 50 continuously covers from the end portion 32 of the first electrode layer 30 to the outer peripheral end 26 of the dielectric film 20 . The dielectric film 20 has an electrode layer placement portion 21 on which the first electrode layer 30 is disposed, and a protective layer covering portion 22 covered with a protective l...
no. 2 approach ＞
[0134] [structure]
[0135] Figure 4 It is a diagram schematically showing a cross section of a semiconductor device 1A according to the second embodiment. Figure 5 yes Figure 4 Enlarged view of Part B. The second embodiment is a modified example of the first embodiment, and differs from the first embodiment in that the first electrode layer 30A has a thin film region (first end portion 321 ). This different configuration will be described below. In addition, in 2nd Embodiment, since the same code|symbol as 1st Embodiment is the same structure as 1st Embodiment, description is abbreviate|omitted.
[0136] Such as Figure 4 as well as Figure 5 As shown, in the semiconductor device 1A of the second embodiment, the end portion 32A of the first electrode layer 30A includes: a first end portion 321 having an outer peripheral end 33A; The second end portion 322 on the central portion 31 side of 30A. The thickness at the outer peripheral end 33A of the first end portion 3...
no. 3 approach ＞
[0155] [structure]
[0156] Figure 6 It is a figure which schematically shows the cross section of the semiconductor device 1B of 3rd Embodiment. The third embodiment is a modified example of the first embodiment, and differs from the first embodiment in that it has a trench structure (groove structure). This different configuration will be described below. In addition, in the third embodiment, since the same reference numerals as in the first embodiment denote the same structures as in the first embodiment, description thereof will be omitted.
[0157] Such as Figure 6 As shown, in the semiconductor device 1B of the third embodiment, the semiconductor substrate 10B has the groove (groove) 13 on the first main surface 11B of the electrode layer arrangement portion 21B where the dielectric film 20B is arranged. The electrode layer arrangement portion 21B of the dielectric film 20B is arranged on the first main surface 11B including the inner surface of the trench 13 to co...
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Abstract
Description
Claims
Application Information
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