LED and preparation method thereof

Abstract

The invention discloses an LED and a preparation method thereof. The LED includes a substrate, a high-temperature nucleating layer and an NGaN layer, wherein the high-temperature nucleating layer and the NGaN layer are sequentially grown on the substrate. According to the bottom layer structure of the LED, the NGaN layer directly grows on the high-temperature nucleating layer, the quality of a film layer is obviously improved, and the doping of the bottom layer is increased, so that the voltage is reduced, and the light emitting efficiency can be greatly improved.

Description

technical field [0001] The invention relates to an LED and a preparation method thereof, in particular to an LED with high light efficiency and a preparation method thereof. Background technique [0002] With the gradual application of LEDs in the field of lighting, the market has higher and higher requirements for the light efficiency of white LEDs. The structure of LEDs in the prior art is as follows: figure 1 As shown, the LED includes a substrate 1 and a low-temperature nucleation layer 2 , a UGaN layer 3 , an NGaN layer 4 , a MWQ layer 5 , an EBL layer 6 , a PGaN layer 7 and a P-type contact layer 8 grown sequentially on the substrate 1 . [0003] However, a low-temperature nucleation layer 2 is grown on the substrate by MOCVD, the temperature is below 600C, and the thickness is <50nm, and UGaN is grown on the grown low-temperature buffer layer. The quality of the growth bottom layer obtained in this way is poor. Affect the voltage of the LED device, and then affect...

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Problems solved by technology

[0003] However, a low-temperature nucleation layer 2 is grown on the substrate by MOCVD, the temperature is below 600C, and the thickness is <50nm, and UGaN is grown on the grown low-temperature buffer layer. The quality of the growth bottom layer obtained in this way is poor. Affect the voltage of the LED device, thereby affecting the light effect

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