Ultraviolet light-emitting diode epitaxial wafer preparation method for improving hole quantity and epitaxial wafer

Abstract

The invention provides a preparation method of an ultraviolet light-emitting diode epitaxial wafer for improving the hole quantity and the epitaxial wafer, and belongs to the technical field of semiconductor devices. And periodically growing an AlGaN composite layer on the active layer to obtain a P-type AlGaN layer, wherein the AlGaN composite layer comprises an AlGaN three-dimensional sub-layer, an AlGaN covering sub-layer and an AlGaN processing sub-layer which are stacked in sequence. And internal stress and defects are reduced. More Mg elements can be more easily doped into the AlGaN three-dimensional sub-layer rich in nitrogen elements, and the hole quantity is increased. The distribution of Al atoms and Ga atoms in a low-nitrogen environment is more uniform, and the crystal quality of the finally obtained AlGaN composite layer is ensured. And finally, only ammonia gas is introduced into the reaction cavity to grow an AlGaN processing sub-layer. It is guaranteed that the finally obtained P-type AlGaN layer can provide a large number of holes, and meanwhile the crystal quality of the finally obtained P-type AlGaN layer is guaranteed.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, and in particular, to a method for preparing an epitaxial wafer of an ultraviolet light emitting diode and an epitaxial wafer for increasing the amount of holes. Background technique [0002] With the development of light-emitting diode applications, the market demand for ultraviolet light-emitting diodes is increasing, and ultraviolet light-emitting diodes with light-emitting wavelengths covering 210-400nm have advantages that traditional ultraviolet light sources cannot match. Ultraviolet light-emitting diodes are often used in lighting, biomedicine, anti-counterfeiting identification, air, water purification, biochemical testing, high-density information storage, etc. The ultraviolet light emitting diode epitaxial wafer is the basis for preparing the ultraviolet light emitting diode. The ultraviolet light emitting diode epitaxial wafer includes a substrate and an N-type ...

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Problems solved by technology

[0003] Due to the large forbidden band width of AlGaN material itself, the donor / acceptor energy levels between the band gaps are deepened, and the ionization energy of dopants also increases accordingly, resulting in very low activation rate and carrier concentration of dopant elements.

Moreover, the activation energy of the Mg acceptor doped in the P-type AlGaN layer is high, which can reach 500-600meV, which leads to a very low activation rate of Mg in the P-type AlGaN layer, which will directly affect the P-type AlGaN layer. The amount of holes in the AlGaN layer leads to a lower luminous efficiency of the obtained UV light-emitting diodes

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