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Semiconductor packaging structure and manufacturing method thereof

A packaging structure and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of limited power transmission capacity, insertion loss, limited through-silicon via process capability, etc. The effect of improving power transmission capacity and reducing insertion loss

Pending Publication Date: 2022-02-15
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, limited by the process capability of through-silicon vias, currently only through-silicon vias with a diameter of 10 μm can be designed (silicon cracks will occur if the aperture is enlarged), resulting in limited power transmission capabilities, and through-silicon vias (TSV, Through- The bridge chip made by Silicon-Via) technology is a semiconductor material, and there will be a certain degree of insertion loss at high frequencies.

Method used

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  • Semiconductor packaging structure and manufacturing method thereof
  • Semiconductor packaging structure and manufacturing method thereof
  • Semiconductor packaging structure and manufacturing method thereof

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Embodiment Construction

[0051] The specific implementation manners of the present disclosure will be described below in conjunction with the accompanying drawings and examples. Those skilled in the art can easily understand the technical problems solved by the present disclosure and the technical effects produced through the contents recorded in this specification. It should be understood that the specific embodiments described here are only used to explain related inventions, rather than to limit the invention. In addition, for the convenience of description, only the parts related to the related invention are shown in the drawings.

[0052] It should be noted that the structures, proportions, sizes, etc. shown in the accompanying drawings of the specification are only used to match the content recorded in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present disclosure. There are limited conditions, so it has...

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Abstract

The invention discloses a semiconductor packaging structure and a manufacturing method thereof provided by the invention, a bridge chip can be manufactured by adopting a through molded via (TMV) technology, namely, the bridge chip is made of a plastic packaging material, so that the insertion loss can be reduced compared with a semiconductor material. In addition, a conductive column with a larger diameter can be directly formed by utilizing a photoetching technology, so that the power transmission capability is improved.

Description

technical field [0001] The present disclosure relates to the field of semiconductor technology, in particular to a semiconductor package structure and a manufacturing method thereof. Background technique [0002] In the system-on-chip (SOC) structure that integrates different chips, the bridge chip (Bridge Chip) is an auxiliary chip, the main function is to connect the signal conversion and transmission of two different interface specifications . In addition, the bridge chip can be fabricated by using a Through-Silicon-Via (TSV, Through-Silicon-Via) technology, so as to realize the interconnection with the shortest path and the highest integration, and improve the power transmission effect. However, limited by the process capability of through-silicon vias, currently only through-silicon vias with a diameter of 10 μm can be designed (silicon cracks will occur if the aperture is enlarged), resulting in limited power transmission capabilities, and through-silicon vias (TSV, T...

Claims

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Application Information

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IPC IPC(8): H01L23/498H01L23/538H01L21/48H01L23/29H01L21/60H01L25/18H01L25/16H01L21/56
CPCH01L23/49827H01L23/49816H01L23/5384H01L23/49822H01L21/4853H01L21/4857H01L21/486H01L24/81H01L23/295H01L25/18H01L25/16H01L21/561H01L21/568H01L2224/81005
Inventor 张勇舜李德章
Owner ADVANCED SEMICON ENG INC
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