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Method for determining presence of novel electronic surface state and use thereof
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A surface state, electronic technology, applied in the direction of material impedance, magnetic properties measurement, etc., can solve the problems of low detection efficiency, consumption of novel electronic surface states, high cost, etc.
Active Publication Date: 2022-03-01
GUANGDONG INST OF SEMICON IND TECH
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[0006] In order to solve the problems of high cost and low detection efficiency in the detection of novel electronic surface states, the inventors have found in long-term research and experiments that metal-insulator transitions will occur in general metal conductor materials as the temperature increases or decreases , before the metal conductor is transformed into an insulator, it exhibits metal characteristics, after the metal conductor transforms into an insulator, it exhibits insulator characteristics, and when inert gas ions are implanted in the metal conductor, the implanted ions act as defects in the metal conductor , which enhances the scattering of electrons in it, making it appear as an insulator; while for metal conductors with novel electron surface states, the defects formed by the implanted inert gas ions in it cannot affect the scattering of novel electrons, so that the change with temperature always presents metal properties
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Embodiment 1
[0062] The first step is to select an epitaxial SIO film with a thickness of 40nm as the original sample, and test the transport characteristics and magnetoresistance characteristics of the original sample;
[0063] In the second step, inject a dose of 2.5×10 into the original sample 15 A / cm 2 , implanting He ions with an energy of 5keV to obtain an implanted sample;
[0064] The third step is to test the transport characteristics and magnetoresistance characteristics of the injected samples.
[0065] Test results such as figure 2 and Figure 4 shown, according to figure 2 It can be seen that the transport characteristics of the original sample of the epitaxial SIO oxide film present a metal-insulator transition, and the transport characteristics of the implanted sample present a metal characteristic; according to Figure 4 It can be seen that the magnetoresistance characteristics of the original sample and the implanted sample of the epitaxial SIO oxide film have sharp...
Embodiment 2
[0067] The difference between this embodiment and embodiment 1 lies in the first step and the second step, specifically:
[0068] In the first step, an epitaxial SIO film with a thickness of 50nm is selected as the original sample, and the transport characteristics and magnetoresistance properties of the original sample are tested;
[0069] In the second step, a dose of 3.5 × 10 15 A / cm 2 , implanting He ions with an energy of 5keV to obtain an implanted sample.
Embodiment 3
[0071] The difference between this embodiment and Embodiment 1 lies in the second step, specifically:
[0072] In the second step, a dose of 8 × 10 14 A / cm 2 , implanting He ions with an energy of 5keV to obtain an implanted sample.
[0073] No matter which embodiment is adopted, the epitaxial SIO film can be grown in the following ways:
[0074] Under the condition that the temperature is not higher than 640°C and the oxygen pressure is not higher than 50mTorr, the pulsed laser method (PLD for short) is used to grow the epitaxial SIO film. The wavelength of the laser is 248nm (KrF), the frequency is 4Hz, and the energy is not higher than 1.6 Jcm -2 , so that the laser bombards the SIO target, so that the SIO atoms are deposited on the TiO 2 SrTiO in the (001) direction of the termination surface 3 On (STO) single crystal substrates, epitaxial SIO thin films meeting the thickness requirements were prepared.
[0075] Other epitaxial film preparation methods can also be us...
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Abstract
The invention discloses a method for determining the existence of a novel electron surface state and application thereof, and the method comprises the following steps: testing the transport characteristics and magnetic resistance characteristics of an original sample; inert gas ions with the diameter not larger than that of argon are injected into an original sample, an injected sample is obtained, and the original sample contains metal elements; and testing the transport characteristic and the magnetic resistance characteristic of the injected sample, and judging that the original sample has a novel electron surface state according to the fact that the transport characteristic shows a metal characteristic and the magnetic resistance characteristic has a peak in a small field in a test result. According to the invention, a new test method is created, the original sample can be tested without a low-temperature environment and under the condition that the original sample has a degree of freedom of motion, and the degree of dependence of the test on professional testers is reduced while the test cost is reduced.
Description
technical field [0001] The invention relates to an electron detection method, in particular to a method for determining the existence of a novel electron surface state and its application. Background technique [0002] In recent years, researchers have discovered that some solid material interfaces exhibit novel electronic behaviors that do not exist in the bulk phase. This novel electron has the characteristics of being able to resist the scattering hindrance caused by defects in the solid material, making the solid material in the role of defects The conduction behavior can still be kept unchanged, and the researchers call this electronic state of novel electrons localized on the surface of solid materials as novel electron surface states. Because solid materials with novel electronic surface states have characteristics different from general solid materials, they have high application value in electronics and electronic devices. Therefore, how to confirm whether there ar...
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