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Photomask construction and light processing method

A light processing and photomask technology, applied in the field of photomask structure and light processing, can solve difficult and difficult problems

Pending Publication Date: 2022-03-01
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such patterning has been difficult at least in part due to difficulties in forming reticles suitable for efficiently utilizing a single dose of actinic radiation to pattern features of varying sizes.

Method used

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  • Photomask construction and light processing method
  • Photomask construction and light processing method
  • Photomask construction and light processing method

Examples

Experimental program
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Embodiment Construction

[0032] Some embodiments include a reticle having first and second patterned features, wherein the second patterned feature is larger than the first patterned feature. The second patterned feature can be configured to balance the optimal dose of actinic radiation associated therewith such that the optimal dose of actinic radiation associated with the second feature is about the same as the optimal dose associated with the first feature, Even if the first patterned feature is smaller than the second patterned feature. Some embodiments include photoprocessing (photopatterning) methods. refer to Figure 5 to 15 describe example embodiments.

[0033] refer to Figure 5 , component 10 is shown on the left side of the figure at initial processing level "A" and on the right side of the figure at subsequent processing level "B".

[0034] Assembly 10 at process level "A" includes photoimageable material 12 formed over underlying substrate 14 (with regions of substrate 14 visible at pr...

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Abstract

The invention relates to a photomask construction and a light processing method. Some embodiments include a photomask including a first pattern feature and a second pattern feature. A first optimal dose of actinic radiation is associated with the first pattern feature and a second optimal dose of actinic radiation is associated with the second pattern feature. The second pattern feature is larger than the first pattern feature. Each of the second pattern features has a configuration including a central region laterally surrounded by an outer region, wherein the central region has a different opacity than the outer region. The configuration of the second pattern features balances the second optimal dose of actinic radiation within about 5% of the first optimal dose of actinic radiation. Some embodiments include light processing methods.

Description

technical field [0001] Photomask construction, photoprocessing methods, integrated circuit fabrication (eg, NAND memory fabrication). Background technique [0002] Photolithography is commonly used during the formation of integrated circuits on semiconductor wafers. More specifically, one form of radiant energy passes through the radiation patterning tool and is delivered to the radiation sensitive material associated with the semiconductor wafer. Radiant energy may be referred to as actinic energy, and may be light in the ultraviolet (UV) range, deep UV range, or the like. Radiation sensitive materials are photoimageable materials such as photoresists. [0003] Radiation patterning tools may be referred to as photomasks or reticles. The term "photomask" is traditionally understood to refer to a mask defining a pattern for the entirety of a wafer, and the term "reticle" is traditionally understood to refer to a patterning tool defining a pattern for only a portion of a wa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11524H01L27/11556H01L27/1157H01L27/11582G03F1/36G03F1/76H10B41/35H10B41/27H10B43/27H10B43/35
CPCG03F1/76G03F1/36H10B41/35H10B41/27H10B43/35H10B43/27G03F1/70G03F7/70558G03F7/70441H10B41/41H10B43/40G03F1/38G03F7/70
Inventor C-Y·李R·M·巴弗拉利
Owner MICRON TECH INC