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CONTROLLER FOR CONTROLLING A GaN-BASED DEVICE AND METHOD FOR IMPLEMENTING THE CONTROLLER

A controller, GND technology, used in output power conversion devices, climate sustainability, high-efficiency power electronic conversion, etc., can solve problems such as stability problems, driving voltage reduction, etc.

Active Publication Date: 2022-03-01
INNOSCIENCE (SUZHOU) TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its low threshold voltage (typically around 6V), this approach may present problems when driving GaN-based HEMTs
Due to the voltage drop across the sampling resistor, the drive voltage to turn on the GaN device will be significantly lower, causing stability issues

Method used

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  • CONTROLLER FOR CONTROLLING A GaN-BASED DEVICE AND METHOD FOR IMPLEMENTING THE CONTROLLER
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  • CONTROLLER FOR CONTROLLING A GaN-BASED DEVICE AND METHOD FOR IMPLEMENTING THE CONTROLLER

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Embodiment Construction

[0015] In the following description, an embodiment of a controller for controlling a GaN-based semiconductor device is set forth as a preferred example according to the present application. Those skilled in the art will appreciate that modifications, including additions and / or substitutions, can be made without departing from the scope and spirit of the invention. Certain details may be omitted so as not to obscure the present invention; however, this disclosure has been written to enable one skilled in the art to practice the teachings herein without undue experimentation.

[0016] Reference in this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. The appearances of the phrase "in one embodiment" or "in some embodiments" in various places in this specification are not necessarily all referring to the sam...

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Abstract

The present disclosure provides a controller for controlling a GaN-based semiconductor device. The controller is configured to receive a current sense signal (VCS) indicative of a drain-to-source current of the GaN-based semiconductor device, and generate a control drive signal (VDRV) to the GaN-based semiconductor device, a gate-source voltage VGS applied to the GaN-based semiconductor device to turn on the GaN-based semiconductor device is stabilized to a voltage value equal to a reference voltage Vref during a turn-on period. An effect of a change in voltage drop across the current sense resistor on operation of the GaN-based semiconductor device is eliminated.

Description

technical field [0001] The present application relates generally to a controller, and more particularly to a controller for controlling gallium nitride (GaN) based semiconductor devices. Background technique [0002] GaN-based semiconductor devices have been widely used in high-frequency power conversion systems due to low power loss and fast switching transitions. Compared with silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs), GaN high-electron mobility transistors (HEMTs) have a better figure of merit and more promising performance in high-power, high-frequency applications. When a controller is used to control Si MOSFETs, a sense resistor is connected in series between the MOSFETs to sense the drain current flowing through the MOSFETs. However, due to its low threshold voltage (typically around 6V), this approach may present problems when driving GaN-based HEMTs. Due to the voltage drop across the sampling resistor, the drive voltage for turning...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08
CPCH02M1/08Y02B70/10H02M1/0009H02M1/0006H03K17/0822H03K17/785H03K17/691H03K2217/0081H02M3/33576H02M3/33507H02M1/0045H03K17/687
Inventor 邹艳波杜发达谢文斌汤超
Owner INNOSCIENCE (SUZHOU) TECH CO LTD