Plasma processing device and method

Abstract

The invention discloses a plasma processing device and method, and the device comprises a vacuum reaction chamber which is internally provided with a lower electrode assembly and a movable upper electrode assembly; the lifting devices are connected with the movable upper electrode assembly to lift the movable upper electrode assembly, each lifting device comprises a supporting column and a driving device, and the driving devices are used for driving the supporting columns to lift the movable upper electrode assembly; the plurality of gas channels respectively extend from the outside of the vacuum reaction cavity to pass through the bottom of the vacuum reaction cavity and the inside of the supporting column, and the movable upper electrode assembly is used for injecting process gas into the vacuum reaction cavity; and the plurality of conductive telescopic sealing structures are respectively arranged in the supporting column and surround the periphery of the gas channel. The vacuum reaction chamber has the advantages that the lifting device, the gas channel and the sealing structure are combined, the movable upper electrode assembly cannot be affected even if the top of the vacuum reaction chamber is opened and closed for multiple times, the concentricity between the movable upper electrode assembly and the wafer and the concentricity between the movable upper electrode assembly and the lower electrode assembly are more easily kept, and the process effect of bevel edge etching is guaranteed.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a plasma processing device and a method thereof. Background technique [0002] During wafer processing, the wafer or the film deposited on the wafer is often etched by plasma gas. During the whole process, the upper electrode assembly of the plasma processing device and the neutrality of the wafer have a great influence on the etching effect of the wafer. [0003] Most of the existing plasma processing devices are designed with a movable upper electrode assembly, which is widely used in the field of wafer etching, especially wafer edge etching. When the wafer is transported into and out of the vacuum reaction chamber, the upper electrode assembly is lifted; when the wafer is processed, the upper electrode assembly is lowered and a slight distance is left between the wafer and the wafer. Therefore, when the upper electrode assembly is lowered to the vicinity of the wafer, ...

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Problems solved by technology

[0004] In the plasma processing device, the upper electrode assembly is usually connected to the chamber end cover of the vacuum reaction chamber. During daily operation and maintenance, it is necessary to open the chamber end cover frequently to adjust the structure in the chamber. It is necessary to re-adjust its centering and linkage with the upper electrode assembly to maintain a high concentricity between the upper electrode assembly and the wafer, but it may take a long time to affect the working hours of the plasma processing device

In addition, the upper electrode assembly connected to the end cover of the cavity may be offset after flipping the switch several times. Even after the centering adjustment of the end cover of the cavity is completed, the etching area on the edge of the wafer will also deviate, which will affect the etching effect

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