Manufacturing method of MEMS pressure sensor chip capable of reducing output drift

A technology of a pressure sensor and a manufacturing method, which is applied in the direction of fluid pressure measurement, measuring fluid pressure, and instrument by changing ohmic resistance, can solve the problems affecting the accuracy and stability of sensor output, sensor output drift, etc., and achieve high measurement accuracy. stability and stability, eliminating effects, reducing the effect of output drift

Inactive Publication Date: 2022-03-25
LONGWAY TECH WUXI
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Problems solved by technology

[0006] The residual stress of the MEMS pressure sensor will slowly release and change over time, causing the sensor output to drift over time, seriously affecting the accuracy and stability of the sensor output

Method used

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  • Manufacturing method of MEMS pressure sensor chip capable of reducing output drift
  • Manufacturing method of MEMS pressure sensor chip capable of reducing output drift
  • Manufacturing method of MEMS pressure sensor chip capable of reducing output drift

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Embodiment Construction

[0044] The present invention is described in further detail now in conjunction with accompanying drawing. These drawings are all simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, so they only show the configurations related to the present invention.

[0045] like figure 1 , a method for manufacturing a MEMS pressure sensor chip that reduces output drift, comprising the following steps:

[0046] S1: making a sensitive structure 1, the sensitive structure 1 is provided with a first cavity 4 and a second cavity 5;

[0047] S2: making piezoresistors 8 on the top of the sensitive structure 1 in the area of ​​the top surface of the first cavity 4 and in the area of ​​the top surface of the second cavity 5;

[0048] S3: Make a dielectric layer 10 on the top of the sensitive structure 1, make a lead hole on the dielectric layer 10, and make a metal lead 12 on the upper surface of the dielectric layer, and the met...

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Abstract

The invention relates to the technical field of MEMS pressure sensors, and discloses a manufacturing method of an MEMS pressure sensor chip capable of reducing output drift, and the method comprises the steps: manufacturing a sensitive structure which is internally provided with a first accommodation cavity and a second accommodation cavity; piezoresistors are respectively manufactured at the top of the sensitive structure in the area of the top surface of the first accommodating cavity and the area of the top surface of the second accommodating cavity, during use, the piezoresistor at the first accommodating cavity outputs a first detection signal in a measurement environment, and the signal comprises a pressure signal and an error signal introduced by residual stress; the piezoresistor at the second accommodating cavity outputs a second detection signal under normal air pressure, the signal only comprises an error signal introduced by residual stress, and the second detection signal compensates the first detection signal to obtain an actual detection signal of the MEMS pressure sensor chip; the influence of the chip structure residual stress and the packaging residual stress on the MEM pressure sensor chip is eliminated, the output drift is reduced, and the pressure sensor has high measurement accuracy and stability.

Description

technical field [0001] The invention relates to the technical field of MEMS pressure sensors, in particular to a method for manufacturing a MEMS pressure sensor chip that reduces output drift. Background technique [0002] MEMS pressure sensor has the characteristics of small size, light weight, low cost, good linearity, high repeatability and high reliability. It is the mainstream direction of the current pressure sensor development and will replace various traditional pressure sensors. MEMS pressure sensors typically have a relatively thin silicon pressure sensitive membrane that deforms under pressure. A piezoresistor is formed on the sensitive film by ion implantation, and the piezoresistor can detect the deformation of the sensitive film under pressure, and correspondingly detect the magnitude of the pressure. [0003] In the case that the external pressure, temperature and other conditions are constant, the output value of the MEMS pressure sensor is theoretically sta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/22G01L9/04G01L19/00
CPCG01L1/22G01L9/04G01L19/00
Inventor 汪祖民
Owner LONGWAY TECH WUXI
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