Cleaning process for reducing metal on surface of silicon wafer

Abstract

The invention discloses a cleaning process for reducing metal on the surface of a silicon wafer. The cleaning process comprises the following steps: S1, carrying a polished silicon wafer to a final cleaning agent loading position for standby; s2, setting a final liquid medicine concentration ratio of the cleaning machine; the temperature setting is that the temperature of the HF tank is set to be normal temperature, the temperature of the SC-1 tank is set to be 60 DEG C, and the temperature of the SC-2 tank is set to be 55 DEG C; s3, starting an ozone generating device of the final cleaning machine; s4, the ultrasonic wave of the final cleaning machine is adjusted to 900 + / -6 W; s5, setting the temperature of the slow lifting groove of the final cleaning machine to be normal temperature; s6, the coordination of FFU setting and air exhaust setting for final cleaning is guaranteed, the air pressure direction is adjusted to be in the state that air is exhausted outwards through the machine body, and the internal environment of the cleaning machine is guaranteed; s7, after process adjustment is completed, spot inspection is conducted on the equipment again, and machining is started after it is guaranteed that no abnormity exists; and S8, after the cleaning is finished, loading a delivery piece box, and carrying the product to the range of an ICP-MS metal tester by using a dry car for waiting for metal inspection. The method has the advantages of reducing metal ions on the surface of the silicon wafer and being convenient to clean.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a cleaning process for reducing the metal on the surface of a silicon wafer. Background technique [0002] With the rapid development of China's semiconductor industry, China's monocrystalline silicon wafer production capacity has expanded rapidly. In order to ensure the safety of silicon wafer supply in the domestic market and the integrity and stability of the integrated circuit industry chain; at the same time reduce my country's dependence on the import of high-quality semiconductor silicon wafers, meet the urgent requirements of my country's integrated circuit industry for silicon substrate basic materials, and produce high-standard The highly demanding 200mm semiconductor silicon wafer monocrystalline silicon substrate has become a necessary development trend. The presence of electrically mobile ion contaminants in the wafer can change the characteristics of the d...

AI Technical Summary

Problems solved by technology

The presence of electrically mobile ion contaminants in the wafer can change the characteristics of the device, changing its performance and reliability parameters, and the movement of metal ions in the device can cause device failure

Images