Operation method of OTS gate tube

Abstract

The invention discloses an operation method of an OTS gate tube, which belongs to the technical field of micro-nano electronics, and comprises the following steps: applying pulses to two ends of the OTS gate tube, and extracting the threshold voltage Vth of the OTS gate tube after the pulses are applied each time; if Vth continuously increases P times or Vth continuously decreases P times, a reverse pulse is applied from the next time, and the number of times the Vth increases or decreases is recounted. Bidirectional pulses are applied to the two ends of an OTS gate tube, when the number of times of operation is increased, electrons are enriched in different local defect states through a field effect corresponding to the bidirectional pulses, different electron distributions are formed, and therefore electrons are prevented from being enriched in the local defect states under unidirectional pulse operation, and threshold voltage drift is reduced; the operation method provided by the invention is an electrical operation method, the operation method is simple and controllable, the problem of threshold drift of the OTS gate tube device is effectively solved on the premise that the requirement on the gate tube preparation process is not improved, and the performance of the OTS gate tube is greatly optimized.

Description

technical field [0001] The invention belongs to the technical field of micro-nano electronics, and more specifically relates to an operation method of an OTS gating tube. Background technique [0002] The next generation of new non-volatile memory, such as phase change memory (Phase Change Memory, PCM), resistive memory and other devices, due to its extremely fast erasing and writing speed, excellent miniaturization performance, and three-dimensional stacking, has become the most Hot next-generation memory. In particular, phase change memory, as one of the most important new-generation memory technologies, has shown great promise in terms of product capacity, storage density, process size, stability, read and write performance, erasing and writing life, and device power consumption. Advantage. In addition to non-destructive reading, lifespan, non-volatility, and erasing speed, phase change memory also has competitive advantages such as multi-value storage, compatibility wi...

AI Technical Summary

Problems solved by technology

[0005] In view of the above defects or improvement needs of the prior art, the present invention provides an operation method of the OTS gating tube, which is us

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