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Chip for visible light communication and preparation method and application thereof

A visible light communication and chip technology, applied in the field of visible light communication, achieves the effect of simplifying process steps and reducing process costs

Pending Publication Date: 2022-04-19
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current research on InGaN-based photodetectors is also focused on single-wavelength PIN and MSM detectors, and high-performance InGaN-based photodetector monolithic integrated chips that respond to multiple bands are urgently needed.

Method used

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  • Chip for visible light communication and preparation method and application thereof
  • Chip for visible light communication and preparation method and application thereof
  • Chip for visible light communication and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] i-In x Ga 1-x In the N functional layer, x=0.4, and the bandgap width is 1.97eV;

[0073] i-In y Ga 1-y In the N functional layer, y=0.15, and the bandgap width is 2.81eV;

[0074] This embodiment provides a chip epitaxial structure for visible light communication, such as figure 1 As shown, from bottom to top, it includes substrate, buffer layer, intrinsic GaN layer, n-GaN-1 layer, i-In 0.4 Ga 0.6 N functional layer, p-GaN layer, i-In 0.15 Ga 0.75 N functional layer, n-GaN-2 layer. The growth process is as follows:

[0075] (1) It is grown on a substrate with a thickness of 300 μm by MOCVD method, and the growth material is trimethylgallium (Ga(CH 3 ) 3 , TMGa), trimethylindium (In(CH 3 ) 3 , TMIn), trimethylaluminum (Al(CH 3 ) 3 , TMAl); sequentially grow 50nm AlN, 250nm AlGaN layer, 1μm GaN layer, 1μm n-GaN-1 layer, 80nm i-In 0.4 Ga 0.6 N functional layer, 100nm p-GaN layer, 80nm i-In 0.15 Ga 0.75 N functional layer and 300nm n-GaN-2;

[0076] Thi...

Embodiment 2

[0081] i-In x Ga 1-x In the N functional layer, x=0.15, and the bandgap width is 2.81eV;

[0082] i-In yGa 1-y In the N functional layer, y=0, and the bandgap width is 3.4eV;

[0083] This embodiment provides a chip epitaxial structure for visible light communication, such as image 3 As shown, from bottom to top, it includes substrate, buffer layer, intrinsic GaN layer, n-GaN-1 layer, i-In 0.15 Ga 0.75 N functional layer, p-GaN layer, i-GaN functional layer, n-GaN-2 layer. The growth process is as follows:

[0084] (1) The MBE method is used to grow on a substrate with a thickness of 400 μm. The raw materials for growth are high-purity indium (In, 99.99999%), high-purity gallium (Ga, 99.99999%), and high-purity aluminum (Al, 99.99999%); 100nm AlN, 300nm AlGaN layer, 2μm GaN layer, 2μm n-GaN-1 layer, 100nm i-In 0.15 Ga 0.75 N functional layer, 130nm p-GaN layer, 400nm i-GaN functional layer and 300nm n-GaN-2;

[0085] This embodiment also provides a structural plan ...

Embodiment 3

[0090] i-In x Ga 1-x In the N functional layer, x=0.15, and the bandgap width is 2.81eV;

[0091] i-In y Ga 1-y In the N functional layer, y=0, and the bandgap width is 3.4eV;

[0092] This embodiment provides a chip epitaxial structure for visible light communication, such as Figure 4 As shown, bottom to top includes substrate, buffer layer, intrinsic GaN layer, n-GaN-1 layer, i-In 0.15 Ga 0.75 N / GaN quantum well functional layer, p-GaN layer, i-GaN functional layer, n-GaN-2 layer. The growth process is as follows:

[0093] (1) It is grown by PLD method on a substrate with a thickness of 450 μm. The raw materials for growth are high-purity indium (In, 99.99999%), high-purity gallium (Ga, 99.99999%), and high-purity aluminum (Al, 99.99999%); 150nm AlN, 400nm AlGaN layer, 3μm GaN layer, 3μm n-GaN-1 layer, 150nm i-InN functional layer, 150nm p-GaN layer, 150nm i-In 0.15 Ga 0.75 N / GaN quantum well functional layer and 500nm n-GaN-2;

[0094] This embodiment also provi...

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Abstract

The invention discloses a chip for visible light communication and a preparation method and application thereof. The chip for visible light communication comprises a substrate, a buffer layer, an intrinsic GaN layer, a first GaN layer, an i-In < x > Ga < 1-x > N functional layer, a second GaN layer, an i-In < y > Ga < 1-y > N functional layer, a third GaN layer and a top electrode which are sequentially stacked, wherein 0 < = x < 1, and 0 < = y < = 1; siO < 2 > isolation layers are arranged on the side walls of the i-In < x > Ga < 1-x > N functional layer, the second GaN layer, the i-In < y > Ga < 1-y > N functional layer and the third GaN layer. A bottom electrode is arranged on the upper portion of the first GaN layer, and the SiO2 isolation layer on the side wall of the i-In < x > Ga < 1-x > N functional layer is located between the bottom electrode and the i-In < x > Ga < 1-x > N functional layer. Through structural design and one-time growth of the chip for visible light communication, dual-band detection of a high-bandwidth chip can be realized.

Description

technical field [0001] The invention belongs to the technical field of visible light communication, and in particular relates to a chip for visible light communication and a preparation method and application thereof. Background technique [0002] Visible light communication (Visible-Light Communication, VLC) is considered to be one of the important components of the new generation of mobile communication due to its wide spectrum, high data transmission confidentiality, and no electromagnetic radiation to the human body. At the same time, modern communication scenarios have a huge demand for communication capacity and speed, so a VLC system based on multi-color LEDs is proposed to solve this problem. However, this also puts forward requirements for photodetectors, especially the requirement for monolithic integration of multi-band response detectors. [0003] The photodetectors currently used in VLC research are mainly commercial Si-based detectors and research-type InGaN-b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/101H01L31/105H01L31/11H01L31/18
CPCH01L31/1013H01L31/11H01L31/105H01L31/1856H01L31/035272H01L31/02161H01L31/03048H01L31/1848H01L31/1852H01L31/1868
Inventor 李国强柴吉星王文樑李灏
Owner SOUTH CHINA UNIV OF TECH