Formation method of semiconductor device

Abstract

The invention provides a method for forming a semiconductor device, which comprises the following steps of: providing a device wafer, and placing the device wafer in a reaction cavity; introducing tetraethoxysilane, triethyl phosphate and triethyl borate into the reaction cavity, and forming a BPSG film on the surface of the device wafer through reaction; ozone is introduced into the reaction cavity, so that the residual tetraethoxysilane, triethyl phosphate and triethyl borate react to form a BPSG substance, and the BPSG substance is attached to the surface of the BPSG film; forming a PE TEOS film on the surface of the BPSG film; cleaning the PE TEOS thin film; and sequentially etching the PE TEOS film, the BPSG film and a part of thickness of the device wafer to form a plurality of spaced holes, and filling metal into the holes to form contact holes. According to the method, the quality of the BPSG film is improved, the situation of electric leakage of the contact hole is further improved, and the product quality is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a semiconductor device. Background technique [0002] When making a semiconductor device with a highly integrated structure, many uneven and irregular shapes are formed on the surface of the semiconductor device due to the high integration, resulting in a strong topography of the semiconductor device, thereby providing a flat surface, which can be passed The irregularities are eliminated by filling these unevennesses with an insulating film, and thus, a planarization method using a BPSG film added with high concentrations of boron (B) and phosphorus (P) has been proposed. A BPSG film is applied on an uneven semiconductor device surface, followed by heat treatment at a high temperature, thereby making the surface flat. BPSG (boro-phospho-silicate-glass, borophospho-silicate-glass) is silicon dioxide doped with boron and phosphorus. Due to the addition ...

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Problems solved by technology

In the subsequent process of forming contact holes, first, the BPSG film and the PE TEOS film are etched perpendicular to the surface of the BPSG film and the PE TEOS film, and a plurality of spaced holes are formed in the BPSG film and the PE TEOS film, and the holes are BPSG film and PE TEOS film; then, when filling the hole with tungsten metal to form a contact hole, when filling tungsten metal, tungsten metal easily enters the gap between the BPSG film and the PE TEOS film, causing the contact hole to be connected in the lateral direction, resulting in Leakage

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