An integrated circuit device structure and integrated chip

Abstract

The embodiments of the present invention disclose an integrated circuit device structure and an integrated chip. The integrated circuit device structure includes: a first component, an isolation unit and a first power supply network; the isolation unit surrounds the first component and is arranged on the same layer as the first component; the first power supply network is located on one side of the first component and is connected to the first component. The first component is electrically connected; the first power network includes multiple layers of first metal layers arranged in layers; the same first metal layer includes a plurality of first power lines that are parallel to each other, and any two first power lines are insulated from each other; wherein , in the same direction, the vertical projection of the first power grid is located in the vertical projection of the isolation unit; the line width index of at least one first metal layer in the first power grid is greater than 1. In the technical solutions of the embodiments of the present invention, the voltage drop in the first power supply network supplying power to the first components is small, and the electromigration phenomenon in the first power supply network supplying power to the first components is less obvious.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular, to an integrated circuit device structure and an integrated chip. Background technique [0002] As the semiconductor process is getting closer and closer to the physical limit, the corresponding chips have higher and higher requirements for the power supply network. The smaller process allows the line width to reach a smaller level to achieve smaller components, but the reduction of the line width will increase the equivalent resistance of the power supply network, resulting in an increase in the voltage drop (IR-drop). Moreover, the highly integrated chip and high-frequency clock design bring higher power density and current density, while power lines with high current density and high-frequency changes are prone to electromigration (EM) phenomenon. . [0003] On this basis, in the design of the chip, for clock trees or special high-frequency sig...

AI Technical Summary

Problems solved by technology

When the frequency is increased, compared with ordinary components (that is, components used to drive smaller loads), large drive components perform more flips per unit time and generate greater current; therefore, large drive components Power lines near the device need to carry more current, resulting in a larger voltage drop

Moreover, because the low-level power lines where the large drive components are located are generally very long, the electromigration phenomenon is aggravated

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