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Device channel carrier average free path detection method and system

A detection method and detection system technology, applied in the field of semiconductor, can solve the problem of large mean free path error in measurement, and achieve the effect of accurate calculation value

Pending Publication Date: 2022-04-29
无锡芯鉴半导体技术有限公司
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Problems solved by technology

[0005] For this reason, the technical problem to be solved by the present invention is to overcome the problem that the measurement mean free path error is large in the prior art

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  • Device channel carrier average free path detection method and system
  • Device channel carrier average free path detection method and system
  • Device channel carrier average free path detection method and system

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specific Embodiment approach

[0050] Based on the above embodiments, this embodiment is a specific implementation of the device channel carrier mean free path detection method, as follows:

[0051] In this embodiment, the mean free path of the device channel carriers is detected at a constant temperature of 300K at room temperature;

[0052] The utilization voltage range is the depletion region voltage and is less than the cut-off voltage V th , the C-V curve is obtained by cyclic voltammetry simulation scan, and 1 / C is obtained from the C-V curve 2-V curve, through 1 / C 2 -V-curve relationship formula Find the donor concentration N D ;

[0053] Among them, q is the electronic charge, ε s is the dielectric constant, is the built-in potential, k is Planck's constant, and T is the temperature;

[0054] Use ordinary voltage source or power source to apply step bias voltage on the device electrode to obtain the critical voltage for generating hot spots;

[0055] Calculate the critical field strength: ...

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Abstract

The invention relates to a device channel carrier average free path detection method and system. The invention relates to a method for determining the average free path of carriers in a channel, which comprises the following steps of: calculating donor concentration by using a C-V curve, applying bias voltage to an electrode of a device to obtain critical voltage Vc generated by a hot spot, and solving critical field intensity of a depletion region based on the critical voltage Vc and the donor concentration ND; measuring an electroluminescent spectrum of a hot spot generated by the device by using a spectrograph, and calculating the characteristic peak energy of the spectrum; and solving the average free path of the carrier based on the critical field intensity of the depletion region and the spectral characteristic peak energy. According to the invention, the average free path of the carriers in the channel is determined by combining optical and electrical means, and the method is of great significance to research on physical characteristics of materials and devices.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a device channel carrier mean free path detection method and system. Background technique [0002] In the existing technology, qualitatively speaking, the mean free path λ m is related to the carrier mobility μ, which is determined by the scattering mechanism, usually: [0003] [0004] Among them, v th is the thermal rate, τ m is the mean free time, k is the Boltzmann constant, K is the thermodynamic temperature, m* is the effective mass of the electron, and q is the charge of the electron. In traditional test schemes, the value of the mean free path is mostly determined by measuring the mobility. However, in the actual measurement process, there will be many errors, which will cause the calculated value of the mean free path to deviate from the theoretical value or the real value. In addition , in semiconductors, there are various scattering mechanisms of carriers...

Claims

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Application Information

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IPC IPC(8): G01R31/26G01N21/65
CPCG01R31/2603G01N21/65
Inventor 陈雷雷闫大为顾晓峰
Owner 无锡芯鉴半导体技术有限公司
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