FinFET high-density novel memory and preparation method thereof
A memory and high-density technology, applied in the fields of electric solid-state devices, semiconductor devices, Hall effect devices, etc., can solve the problems of large device occupation area and low data storage density, and achieve higher integration, higher storage density, and simpler methods. easy effect
Pending Publication Date: 2022-04-29
致真存储(北京)科技有限公司
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Problems solved by technology
However, as a three-terminal device, SOT-MRAM inevitably has the problem of a larger device footprint than traditional two-terminal devices, resulting in a lower data storage density.
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specific Embodiment 1
[0041] The specific embodiment of the present invention provides a new FinFET high-density memory, which is composed of multiple memory cells on the substrate layer 101 . Such as figure 1 As shown, each memory cell includes: a current writing layer 1021, two magnetic tunnel junctions 1121 and 1122 with the same structure located on both sides of the current writing layer; as shown in the figure, the magnetic tunnel junctions 1121 respectively include The free layer 1031, the barrier layer 1041, the artificial antiferromagnetic coupling layer 1051, and the covering layer 1061, and the two magnetic tunnel junctions 1121 and 1122 are respectively located on both sides of the current writing layer 1021 to form a symmetrical structure;
[0042] The artificial antiferromagnetic coupling layer 1051 includes a pinned layer 1052 , an antiferromagnetic coupling layer 1053 , and a pinning layer 1054 .
[0043] In this embodiment, the provided substrate layer 101 is a complementary metal...
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The invention discloses a FinFET high-density novel memory and a preparation method thereof, the memory is composed of a plurality of memory units on a substrate layer, and each memory unit comprises a current write-in layer and two magnetic tunnel junctions with the same structure; each magnetic tunnel junction comprises a free layer, a barrier layer, an artificial antiferromagnetic coupling layer and a covering layer which are arranged in sequence, and the two magnetic tunnel junctions are located on the two sides of the current write-in layer respectively to form a symmetrical structure; the artificial antiferromagnetic coupling layer comprises a fixed layer, an antiferromagnetic coupling layer and a pinning layer. According to the memory prepared by the invention, differential storage is realized by utilizing opposite spin Hall angles of two symmetrical magnetic tunnel junctions, and a plurality of junction storage units can be formed on one current write-in layer, so that the storage density is improved; the storage unit is of a differential structure, use of source lines, word lines and bit lines is reduced, and the integration level is improved; according to the preparation method, only one deposition etching process is needed, and the method is simple and easy to implement.
Description
technical field [0001] The invention relates to the technical field of magnetic memory, in particular to a novel high-density memory based on spin-orbit moment and a preparation method thereof. Background technique [0002] With the continuous upgrading of the software and hardware performance of electronic equipment, the market puts forward higher requirements for the operating speed and storage speed of computers. Spin-orbit moment magnetic memory (SOT-MRAM) has the advantages of non-volatility, high-speed and low-power data writing, and high device durability. It is a key technology that is expected to break through the bottleneck of integrated circuit power consumption in the post-Moore era. The core structure of the SOT device mainly includes a magnetic tunnel junction (MTJ) for storing data and an SOT bottom electrode layer for providing spin-orbit moments to write data. The core structure of the MTJ is composed of a ferromagnetic free layer, a nonmagnetic barrier lay...
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IPC IPC(8): H01L43/08H01L43/06H01L27/22H10N50/10H10N52/00
CPCH10B61/00H10B61/22H10N52/101H10N50/10
Inventor 卢世阳商显涛刘宏喜曹凯华王戈飞
Owner 致真存储(北京)科技有限公司