SiC MOSFET device total dose effect test method
A technology of total dose effect and test method, which is applied in the field of total dose effect test of SiC MOSFET devices, and can solve problems such as incomplete application of radiation test methods, different failure mechanisms of devices, and different radiation effects
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[0034] Below in conjunction with accompanying drawing, the present invention is described in further detail:
[0035] The present invention carries out the method for total dose effect test for SiC MOSFET device, such as figure 1 As shown, it includes the test of the device under test before irradiation, the second high temperature test of the device under test before irradiation, the irradiation test of the device under test, the annealing treatment of the device under test after irradiation and the analysis and processing of test data after irradiation of the device under test.
[0036] (1) Test of the device under test before exposure
[0037] According to the test conditions stipulated in the product manual, use a suitable test device to test the electrical parameters of the device under test, and record the test data. Only devices with qualified electrical parameters can be used for subsequent tests.
[0038] (2) Annealing treatment of the tested device before irradiat...
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