Preparation method of grinding block and grinding wheel for grinding semiconductor plastic package body
A grinding block and semiconductor technology, applied in grinding/polishing equipment, abrasives, grinding devices, etc., can solve the problems of high price of grinding wheels, scratches on product surfaces, and high production costs for customers, so as to improve the effective use time and reduce Grinding wheel cost, the effect of reducing customer production cost
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[0042] refer to Figure 1-8 , the present embodiment provides a method for preparing a grinding block for grinding a semiconductor plastic package, comprising the following steps:
[0043] 1) raw material drying; place the vitrified bond, diamond powder and pore-forming agent aluminum oxide hollow balls in a drying oven to dry;
[0044] 2) diamond powder sieving; select a screen cloth with two standard grades larger than the selected diamond powder particle size, and use a vibrating sieving machine to sieve the diamond powder to remove large-grain diamonds in the diamond powder;
[0045] 3) batching; take by weight 35-50% vitrified bond, 35-50% diamond powder, 10-20% aluminum oxide hollow spheres and 5-10% for wetting vitrified bond The auxiliary agent is put into the mixing tank and then put into the three-dimensional mixing machine to fully mix evenly to obtain the raw material mixture;
[0046] 4) Compression molding: Measure the raw material mixture, pour it into the gri...
Embodiment 1
[0057] This embodiment provides a method for preparing a grinding block for grinding a semiconductor plastic package, comprising the following steps:
[0058] 1) raw material drying; place vitrified bond, diamond powder and pore-forming agent aluminum oxide hollow balls in a drying oven for 12 hours at 85°C; wherein, vitrified bond includes 65% silicon dioxide, 10% boron trioxide, 10% alumina, 5% calcium oxide, 5% sodium oxide and 5% magnesium oxide, the particle size of the vitrified bond is 15μm; the diamond powder is 1300 mesh raw polycrystalline diamond ; The inner diameter of the pore-forming agent alumina hollow sphere is 50 μm, and the wall thickness is 3 μm;
[0059] 2) diamond powder sieving; select a 1000-mesh sieve, and use a vibration sieving machine to sieve the diamond powder 3 times to remove large-grain diamonds in the diamond powder;
[0060] 3) batching; take by weight 40% vitrified bond, 40% diamond powder, 15% aluminum oxide hollow spheres and 5% auxiliary...
Embodiment 2
[0081] This embodiment provides a method for preparing a grinding block for grinding a semiconductor plastic package, comprising the following steps:
[0082] 1) raw material drying; place vitrified bond, diamond powder and pore-forming agent aluminum oxide hollow balls in a drying oven and dry at 100°C for 10 hours; wherein, vitrified bond includes 62% silicon dioxide, 12% boron trioxide, 8% aluminum oxide, 5% calcium oxide, 5% sodium oxide and 5% magnesium oxide, the particle size of the vitrified bond is 15 μm; the diamond powder is 1200 mesh raw polycrystalline diamond ; The inner diameter of the pore-forming agent alumina hollow sphere is 40 μm, and the wall thickness is 5 μm;
[0083] 2) diamond powder sieving; the selection specification is 800 mesh, and the diamond powder is sieved 3 times by a vibrating sieving machine to remove large-grained diamonds in the diamond powder;
[0084] 3) batching; take by weight 42% vitrified bond, 40% diamond powder, 12% aluminum oxid...
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