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Method and equipment for horizontally and continuously corroding upper surface of crystalline silicon wafer

A crystalline silicon wafer, horizontal technology, used in semiconductor devices, transportation and packaging, semiconductor/solid-state device manufacturing, etc., can solve problems such as the inability to meet the requirements of high-efficiency solar cell back surface flatness and smoothness

Pending Publication Date: 2022-05-13
SHARESUN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the commonly used acid etching back etching technology cannot meet the flatness and smoothness requirements of high-efficiency solar cells on the back surface.

Method used

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  • Method and equipment for horizontally and continuously corroding upper surface of crystalline silicon wafer
  • Method and equipment for horizontally and continuously corroding upper surface of crystalline silicon wafer
  • Method and equipment for horizontally and continuously corroding upper surface of crystalline silicon wafer

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Embodiment Construction

[0018] In the following description, for the purpose of explanation, detailed embodiments of the present invention are set forth to help a comprehensive understanding of the present invention. Obviously, these descriptions are not intended to limit the invention. Without departing from the spirit and essence of the present invention, those skilled in the art can make various other corresponding combinations, changes or modifications according to the present invention. These corresponding combinations, changes and modifications all belong to the protection scope of the appended claims of the present invention.

[0019] One of the characteristics of a method for horizontally and continuously etching the upper surface of a crystalline silicon wafer disclosed in the present invention is that: the crystalline silicon wafer 10 is horizontally transported by the transport roller 30 above the liquid level 90 of the high-temperature liquid 40 in the alkali etching reaction tank 60; Al...

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Abstract

According to the method and the equipment for horizontally and continuously corroding the upper surface of the crystal silicon wafer, a layer of alkali solution is coated on the upper surface of the crystal silicon wafer needing to be corroded by the alkali solution, so that the alkali solution forms a layer of alkali solution film on the upper surface of the crystal silicon wafer. And in the alkali corrosion reaction unit, the crystal silicon wafer and the alkali solution film are heated to a reaction temperature, so that the alkali solution on the upper surface of the crystal silicon wafer and the upper surface of the crystal silicon are subjected to an alkali corrosion reaction, and the reaction temperature is kept until the crystal silicon wafer is conveyed to leave the alkali corrosion reaction unit.

Description

technical field [0001] The invention relates to a method and equipment for horizontally and continuously etching crystalline silicon wafers, in particular to a method and equipment for horizontally and continuously etching the upper surface of crystalline silicon wafers. The method and equipment for horizontally and continuously corroding the upper surface of a crystalline silicon wafer have the advantages of wide application, low production cost, easy treatment of generated waste water, and the like. Background technique [0002] The method of horizontal continuous etching of crystalline silicon wafers has two important applications in the production process of crystalline silicon wafer solar cells. The texturing process step in the process of producing polycrystalline silicon wafer solar cells is accomplished by horizontal and continuous etching of crystalline silicon wafers. The general method of the texturing step is that the polysilicon wafer is horizontally and contin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306H01L21/677H01L31/18H01L21/67
CPCH01L21/30604H01L21/67075H01L21/67248H01L21/6776H01L31/1804
Inventor 季静佳黄勇覃榆森
Owner SHARESUN CO LTD