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Perovskite quantum dot material, preparation method thereof and optoelectronic device

A technology of quantum dot materials and optoelectronic devices, which is applied in the fields of optoelectronic devices, perovskite quantum dot materials and their preparation, can solve problems such as sudden drop in optical performance, achieve stable luminous performance, excellent luminous performance, and widen the use temperature window Effect

Pending Publication Date: 2022-05-27
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, perovskite quantum dots show a serious temperature-dependent effect in practical applications, that is, as the temperature increases, there is a phenomenon of sudden drop in optical properties.

Method used

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  • Perovskite quantum dot material, preparation method thereof and optoelectronic device
  • Perovskite quantum dot material, preparation method thereof and optoelectronic device
  • Perovskite quantum dot material, preparation method thereof and optoelectronic device

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Embodiment Construction

[0032] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present invention.

[0033] In the description of the present invention, it should be understood that the terms "first" and "second" are only used for description purposes, and cannot be interpreted as indicating or implying relative importance or implying the number of indicated technical features. Thus, features delimited with "first", "second" may expressly or implicitly include one or more of said features. In the description of the present invention, "plurality" means two or more, unle...

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Abstract

The invention provides a perovskite quantum dot material, a preparation method thereof and a photoelectronic device, the perovskite quantum dot material comprises a perovskite quantum dot crystal and a rare earth complex, and the rare earth complex is used as a ligand of the perovskite quantum dot crystal. The rare earth complex has high thermal stability and still has excellent luminescence performance at high temperature, so that light emitted by the rare earth complex can make up for the situation that luminescence of perovskite quantum dot crystals is weakened at high temperature, the overall luminescence performance is stable macroscopically, and the use temperature window of the perovskite quantum dot material can be widened.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a perovskite quantum dot material, a preparation method thereof, and an optoelectronic device. Background technique [0002] Perovskite quantum dots have the advantages of full-spectrum tunable color in the visible light region, high quantum efficiency (up to 100%), and ultra-high color purity, and have great application prospects in the fields of solar cells, lasers, photodetectors, lighting and displays. . [0003] However, perovskite quantum dots show a severe temperature-dependent effect in practical applications, that is, with the increase of temperature, the phenomenon of a sharp drop in optical properties occurs. Therefore, how to widen the operating temperature window of perovskite quantum dots has become an urgent problem to be solved. SUMMARY OF THE INVENTION [0004] The purpose of the present invention is to provide a perovskite quantum dot material, a pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/66C09K11/06C09K11/02B82Y20/00B82Y40/00
CPCC09K11/665C09K11/66C09K11/06C09K11/025B82Y20/00B82Y40/00Y02E10/549
Inventor 吴永伟
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD