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Pressure sensor and preparation method thereof

A technology of pressure sensor and force sensitive resistor, which is applied in the field of pressure sensor and its preparation, can solve the problems of poor flexibility, difficult pressure accurate monitoring, strong pressure interference, etc., and achieve the effect of reducing pressure interference and improving flexibility

Pending Publication Date: 2022-05-27
INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the prior art, the pressure sensors based on silicon wafers are generally prepared on the surface of the substrate, which makes the overall thickness of the device larger and less flexible, which in turn leads to strong pressure interference of the pressure sensor on the monitoring environment, which is difficult to monitor. Accurate monitoring of contact interface pressure

Method used

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  • Pressure sensor and preparation method thereof
  • Pressure sensor and preparation method thereof
  • Pressure sensor and preparation method thereof

Examples

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no. 1 example

[0035] figure 1 It is a schematic structural diagram of the pressure sensor according to the first embodiment. like figure 1 As shown, the pressure sensor of this embodiment includes a silicon wafer 10 and a flexible film 11 , and at least one force-sensitive resistor 12 is disposed on one side of the silicon wafer 10 . The flexible film 11 covers the silicon wafer 10 , and the thickness of the flexible film 11 is greater than or equal to the thickness of the silicon wafer 10 .

[0036] In the present application, the force-sensitive element is embedded in the flexible film through the embedding technology. The pressure sensor thus formed has good flexibility, reduces the pressure interference of the device itself to the monitoring environment, and can realize accurate monitoring of the contact interface pressure.

[0037] In this embodiment, the silicon wafer 10 is made of SOI (Silicon-On-Insulator, silicon on insulating substrate) silicon wafer. The buried oxide layer of ...

no. 2 example

[0045] figure 2 It is a schematic flowchart of the manufacturing method of the pressure sensor according to the second embodiment. like figure 2 As shown, the preparation method of the pressure sensor in this embodiment includes the following steps:

[0046] In step a, a silicon wafer is provided, and at least one force-sensitive resistor is arranged on one side of the silicon wafer.

[0047] Optionally, in step a, including:

[0048] Step a1. Such as image 3 As shown in (a), an SOI silicon wafer is provided, including an upper layer of silicon 21 , a buried oxide layer 22 and a lower layer of silicon 23 . The buried oxide layer 22 separates the SOI silicon wafer into an upper layer silicon 21 and a lower layer silicon 23 .

[0049] Step a2. Such as image 3 As shown in (b), at least one force-sensitive resistor 31 is formed on one surface of the upper silicon layer 21 .

[0050] Optionally, in step a2, it also includes:

[0051] Step a21. Evenly scrape the nickel-cop...

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Abstract

The invention relates to a pressure sensor which comprises a silicon wafer and a flexible film, at least one force sensitive resistor is arranged on one side of the silicon wafer, the silicon wafer is coated with the flexible film, and the thickness of the flexible film is larger than or equal to that of the silicon wafer. The invention also relates to a preparation method of the pressure sensor, and the method comprises the steps: providing a silicon wafer, and arranging at least one force-sensitive resistor at one side of the silicon wafer; and forming a flexible film wrapping the silicon wafer to obtain the pressure sensor. According to the application, the force sensitive element made of the silicon wafer is embedded in the flexible film, so that the flexibility of the device can be improved, the pressure interference of the device to the monitoring environment is reduced, and the accurate monitoring of the pressure of the contact interface can be realized.

Description

technical field [0001] The present application relates to the technical field of pressure sensors, in particular to a pressure sensor and a preparation method thereof. Background technique [0002] The basic principle of measuring the contact pressure between the contact surfaces of two objects is to string force-sensitive elements into the force system structure, and the intervention of the force-sensitive elements will change the environment of the measured system. However, in the pressure sensor based on silicon wafers in the prior art, silicon wafers are generally prepared on the surface of the substrate, which makes the overall thickness of the device larger and the flexibility is poor, which in turn causes the pressure sensor to have strong pressure interference on the monitoring environment, making it difficult to Realize accurate monitoring of contact interface pressure. SUMMARY OF THE INVENTION [0003] In view of the above technical problems, the present applica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18
CPCG01L1/18
Inventor 冯雪杜琦峰陈颖
Owner INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG
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