Physical vapor deposition device and depressurization method thereof

A physical vapor deposition, pre-depressurization technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of cryopump temperature increase, cryopump impact force, adverse cryopump life and other problems , to achieve the effect of guaranteed life

Pending Publication Date: 2022-05-31
HUA HONG SEMICON WUXI LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] This application provides a physical vapor deposition device and a method for reducing the pressure of the device, which can solve the problem that the related tec

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  • Physical vapor deposition device and depressurization method thereof
  • Physical vapor deposition device and depressurization method thereof

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[0031] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0032] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a physical vapor deposition device and a cooling method thereof. According to the device, a buffering cavity is additionally arranged between a working cavity and a low-temperature pump, and the buffering cavity and the working cavity are connected through a pre-depressurization branch. The pressure reduction method comprises the following steps that the air inlet pneumatic valve is controlled to be opened, so that the air inlet branch is a passage; air is fed into the working cavity through the air inlet branch, so that the pressure intensity of the working cavity reaches first pressure intensity; the pre-depressurization pneumatic valve is controlled to be opened, so that the working cavity communicates with the buffer cavity through the pre-depressurization branch; the low-temperature pump is enabled to perform pre-air-exhaust pressure reduction operation on the working cavity through the buffer cavity, and an air inlet branch and a second air path which are communicated with each other; the gate valve is controlled to be opened, so that the air exhaust end of the working cavity communicates with the air inlet end of the buffer cavity; and a low-temperature pump carries out air exhaust and pressure reduction operation on the working cavity through the air inlet end of the buffer cavity.

Description

technical field [0001] The present application relates to the technical field of semiconductor integrated circuit manufacturing, and in particular to a physical vapor deposition device and a pressure reduction method for the device. Background technique [0002] Physical Vapor Deposition (Physical Vapor Deposition, PVD) technology refers to the use of physical methods under vacuum conditions to vaporize the surface of a material source (solid or liquid) into gaseous atoms or molecules, or partially ionize into ions, and pass through a low-pressure gas (or plasma) ) process, the technology of depositing a thin film with a certain special function on the surface of the substrate, is widely used in the field of semiconductor integrated circuit manufacturing technology, [0003] In the back gold process, the PVD process is usually used to deposit a metal layer on the back of the wafer. Since the deposited metal layer is relatively thick, in order to prevent the wafer from warpin...

Claims

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Application Information

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IPC IPC(8): C23C14/56C23C14/54
CPCC23C14/56C23C14/54
Inventor 祁志超谭秀文吕剑
Owner HUA HONG SEMICON WUXI LTD
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