Unlock instant, AI-driven research and patent intelligence for your innovation.

Alignment mark structure

An alignment mark, single-layer structure technology, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve problems such as accuracy reduction, improve accuracy, prevent interference signal generation, high reflectivity Effect

Pending Publication Date: 2022-05-31
NUVOTON
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the light passes through the transparent layer and illuminates the substrate, reflected light from the substrate will be generated. Due to the influence of the reflectivity of the substrate and the refractive index of the transparent layer, the reflected light from the substrate is different from the reflection from the transparent layer. The light produces an unexpected wave path difference, forming an interference signal, which in turn leads to a reduction in the accuracy of the alignment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Alignment mark structure
  • Alignment mark structure
  • Alignment mark structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] figure 1 It is a cross-sectional view of an alignment mark structure according to an embodiment of the present invention.

[0031] Please refer to figure 1 , the alignment mark structure 10 includes a substrate 100 , a light-transmitting layer 102 and a reflective layer 104 . The alignment mark structure 10 may be a zero layer alignment mark structure. The substrate 100 may be a semiconductor substrate, such as a silicon substrate, but the invention is not limited thereto.

[0032] The light-transmitting layer 102 is disposed on the substrate 100 . The light-transmitting layer 102 may have grooves 102a. The number of grooves 102a may be one or more, and is not limited to figure 1 quantity shown in . The material of the light-transmitting layer 102 is, for example, a wide band gap semiconductor such as gallium nitride (GaN), silicon carbide (SiC), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), or indium gallium nitride. For example, the light-transmitti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an alignment mark structure. The alignment mark structure comprises a substrate, a light-transmitting layer and a reflecting layer, the light-transmitting layer is disposed on the substrate. The reflective layer covers the entire top surface of the light transmissive layer. The reflective layer has a recess. The alignment mark structure can prevent interference signals from being generated.

Description

technical field [0001] The present invention relates to a semiconductor structure, in particular to an alignment mark structure. Background technique [0002] In the semiconductor process, alignment marks are used to assist the process to proceed smoothly. Currently, an alignment mark structure has been developed, which includes a substrate and a light-transmitting layer on the substrate, and the light-transmitting layer has an alignment pattern. When the alignment mark structure is used for alignment, the light will irradiate the light-transmitting layer to generate reflected light, so an alignment signal can be obtained. However, when the light passes through the light-transmitting layer and irradiates the substrate, reflected light from the substrate will be generated. Due to the influence of the reflectivity of the substrate and the refractive index of the light-transmitting layer, the reflected light from the substrate and the reflection from the light-transmitting lay...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/544
CPCH01L23/544H01L2223/54426
Inventor 魏旭志黄尧峰温文莹
Owner NUVOTON
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com