Current measurement system based on influence of dynamic and static parameters of parallel SiC MOSFETs

Abstract

The invention discloses a current measurement system based on parallel SiCMOSFET dynamic and static parameter influence, which comprises a power circuit, a driving circuit and a driving power supply circuit, and is characterized in that the power circuit is composed of a direct current bus side circuit and a measurement device circuit; the driving circuit is divided into an upper half-bridge driving circuit and a lower half-bridge driving circuit which are completely the same; the driving power supply circuit is composed of a voltage Vd generating circuit and a driving power supply main circuit. According to the invention, the problem of current imbalance between parallel devices caused by static parameter dispersion and asymmetry of parasitic parameters of a power loop, a driving circuit and a packaging structure of the SiCMOSFET device can be solved, and the current capacity can be expanded by connecting the SiCMOSFETs in parallel so as to meet the design requirement.

Description

technical field [0001] The invention relates to the technical field of power semiconductor device testing, in particular to a system for measuring the influence of dynamic and static parameters of parallel SiC MOSFETs on current distribution. Background technique [0002] With the popularization of high-power applications and high-precision equipment, Si MOSFETs can no longer meet this demand. SiCMOSFET devices have the advantages of high critical breakdown field strength, good thermal conductivity, low on-resistance, and higher electron saturation speed. More and more attention has been paid to the electronic field. However, in order to meet the needs of high-power applications, single-chip SiC MOSFET devices cannot meet their needs, and high-current power semiconductor modules are usually more expensive. meet the design requirements. However, due to the dispersion of static parameters of SiC MOSFET devices, and the asymmetry of parasitic parameters of power loop, drive ci...

AI Technical Summary

Problems solved by technology

[0002] With the popularization of high-power applications and high-precision equipment, Si MOSFETs can no longer meet this demand. SiC MOSFET devices have the advantages of high critical breakdown field strength, good thermal conductivity, small on-resistance, and higher electron saturation speed. Therefore, in power The field of electronics is attracting more and more attention. However, in order to meet high-power applications, single-chip SiC MOSFET devices cannot meet their needs, and high-current power semiconductor modules are usually more expensive. Therefore, parallel SiC MOSFETs are generally used to expand the current capacity to Meet the design requirements

However, due to the dispersion of static parameters of SiC MOSFET devices, and the asymmetry of parasitic parameters of power loops, drive circuits, and packaging structures, the current imbalance between parallel devices will occur. Due to the influence of current distribution, it is necessary to improve the design to reduce the current imbalance

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