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Magnetic random access memory, memory array and electronic equipment

A random access memory and magnetic technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of MRAM reliability to be improved, and achieve the effect of reducing the possibility of flipping

Pending Publication Date: 2022-06-24
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the reliability of MRAM needs to be improved at present

Method used

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  • Magnetic random access memory, memory array and electronic equipment
  • Magnetic random access memory, memory array and electronic equipment
  • Magnetic random access memory, memory array and electronic equipment

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Experimental program
Comparison scheme
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Embodiment Construction

[0015] It can be known from the background art that the reliability of the current MRAM needs to be improved.

[0016] According to analysis, the standard MRAM reference resistance read strategy uses multiple reference cells whose magnetic tunnel junctions are in anti-parallel state (ie high resistance state) and parallel state (ie low resistance state) as a reference to read data. Generally speaking, the number of times the reference unit is read is much greater than the number of times that the data unit is read. If no special treatment is taken, the resistance state of the reference cell is likely to be reversed after a long read operation, which will cause the reference resistance value to change, and the data read error rate to rise rapidly, reducing the reliability of the MRAM.

[0017] The reason why the reliability of MRAM needs to be improved is now analyzed in combination with a magnetic random access memory. figure 1 It is a schematic diagram of the structure of a ...

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PUM

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Abstract

A magnetic random access memory, a memory array and an electronic device, comprising: a driving signal module for providing a read signal; the storage array comprises a plurality of storage units; the storage unit of the to-be-read data is a data unit and is used for loading a read signal to output data voltage; the memory unit used as a reading reference is a reference unit, the reference unit comprises one or more parallel state reference units, and a magnetic free layer of each parallel state reference unit is used for forming a reference output end; or, the reference unit comprises one or more anti-parallel state reference units, and the magnetic fixed layer of each anti-parallel state reference unit is used for forming a reference output end; the reference unit is used for loading a reading signal and outputting a reference voltage through a reference output end; and the comparison circuit is used for reading the data of the data unit according to the relative magnitude of the data voltage and the reference voltage. According to the invention, the possibility that the resistance state of the reference unit is overturned during read operation is reduced, the reliability of the reference unit is ensured, and the performance of the MRAM is improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a magnetic random access memory, a storage array, and an electronic device. Background technique [0002] Magnetic Random Access Memory (MRAM) is a non-volatile magnetic random access memory. MRAM devices have the high-speed read and write capabilities of static random access memory (SRAM) and the high performance of dynamic random access memory (DRAM). Integrated, and can be rewritten basically infinitely many times, MRAM device is a kind of "full kinetic energy" solid-state memory. Magnetic random access memory is considered to be the most widely used "general-purpose" processor in the future due to its high read and write speed, long life and non-volatile advantages, and is expected to dominate the next-generation memory market. [0003] In an MRAM device, data is stored by the magnetic state of the storage element. An MRAM cell usually c...

Claims

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Application Information

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IPC IPC(8): G11C11/16
CPCG11C11/161G11C11/1673G11C11/1675
Inventor 夏文斌张宏
Owner SEMICON MFG INT (SHANGHAI) CORP