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Magnetic random access memory, memory array and electronic equipment

A random access memory, magnetic technology, applied in the field of circuits, can solve the problem that the reliability of MRAM needs to be improved

Pending Publication Date: 2022-06-24
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the reliability of MRAM needs to be improved at present

Method used

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  • Magnetic random access memory, memory array and electronic equipment
  • Magnetic random access memory, memory array and electronic equipment
  • Magnetic random access memory, memory array and electronic equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] It can be known from the background art that the reliability of the current MRAM needs to be improved.

[0017] After analysis, it is known that the standard MRAM reference resistance reading strategy uses multiple reference cells in the antiparallel state (ie high resistance state) and reference cells in parallel state (ie low resistance state) as references to read data. . Generally speaking, the number of times the reference unit is read is much greater than the number of times that the data unit is read. If no special treatment is done, after a long read operation, the resistance state of the reference cell is likely to be reversed, resulting in a change in the reference resistance value, a rapid increase in the data read error rate, and a decrease in the reliability of the MRAM.

[0018] The reason why the reliability of MRAM needs to be improved is now analyzed in combination with a magnetic random access memory. figure 1 It is a schematic diagram of the structu...

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PUM

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Abstract

The invention discloses a magnetic random access memory, a memory array and electronic equipment, and the magnetic random access memory comprises a driving signal module which is used for providing a reading signal; the storage array comprises a plurality of storage units arranged in an array, each storage unit comprises a magnetic tunnel junction, and each magnetic tunnel junction comprises a magnetic fixed layer and a magnetic free layer which are oppositely arranged; the data unit is used for loading and reading signal output data voltage; the reference unit comprises a parallel state reference unit and an anti-parallel state reference unit; the magnetic free layer of the parallel state reference unit is coupled with the magnetic fixed layer of the anti-parallel state reference unit to form a reference output end, and the reference unit is used for loading a reading signal and outputting a reference voltage through the reference output end; and the comparison circuit is used for reading the data of the data unit according to the relative magnitude of the data voltage and the reference voltage. According to the embodiment of the invention, the possibility that the resistance state of the reference unit is overturned during read operation is reduced, the reliability of the reference unit is ensured, and the performance of the MRAM is improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of circuits, and in particular, to a magnetic random access memory, a storage array, and an electronic device. Background technique [0002] Magnetic Random Access Memory (MRAM) is a non-volatile magnetic random access memory. MRAM devices have the high-speed read and write capabilities of static random access memory (SRAM) and the high performance of dynamic random access memory (DRAM). Integrated, and can be rewritten basically infinitely many times, MRAM device is a kind of "full kinetic energy" solid-state memory. Magnetic random access memory is considered to be the most widely used "general-purpose" processor in the future due to its high read and write speed, long life and non-volatile advantages, and is expected to dominate the next-generation memory market. [0003] In an MRAM device, data is stored by the magnetic state of the storage element. An MRAM cell usually consists of a transi...

Claims

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Application Information

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IPC IPC(8): G11C11/16
CPCG11C11/161G11C11/1673G11C11/1675G11C11/1695G11C11/1697
Inventor 夏文斌王韬
Owner SEMICON MFG INT (SHANGHAI) CORP