Grounding ring, adjusting method thereof and plasma processing device
A plasma and processing device technology, which is applied in the field of grounding rings and plasma processing devices, can solve the problems of etching rate differences, inability to use, uneven distribution of radio frequency, etc., and achieve the effect of improving radio frequency distribution and ensuring uniformity
Pending Publication Date: 2022-06-28
ADVANCED MICRO FAB EQUIP INC CHINA
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Problems solved by technology
However, the internal structure of the reaction chamber cannot adopt a completely symmetrical design structure due to its own functional limitations. For example, the film transfer openings, pumping channels, and observation windows on the side walls of the reaction chamber. If the asymmetric structure is used as part of the RF circuit, it will inevitably cause uneven distribution of RF, which will affect the uniformity of etching
Through testing, it is found that the etching rate of the substrate surface close to the above-mentioned asymmetric structure is different from that of other regions
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[0026] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0027] figure 1 A schematic diagram of a capacitively coupled plasma processing device is shown. Capacitively coupled plasma etching equipment is a kind of equipment that generates plasma in the reaction chamber through capacitive coupling by the radio frequency power applied to the plate and is used for etching. It includes a vacuum reacti...
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According to the grounding ring, the adjusting method thereof and the plasma processing device provided by the invention, the connecting bodies are arranged on the grounding ring, and radio frequency distribution is improved by adjusting the number of the connecting bodies and / or replacing the connecting bodies with different widths and / or adjusting the width of the gap between the detachably connected end parts of the connecting bodies and the ring body; and the uniformity of the etching rate is effectively ensured.
Description
technical field [0001] The present invention relates to the technical field of plasma processing devices, in particular to the technical field of grounding rings in plasma processing devices. Background technique [0002] As the processing accuracy of the substrate is higher and higher, the RF power applied to the reaction chamber is higher and higher, and the uniformity of the etching process is also higher and higher. However, the internal structure of the reaction chamber cannot adopt a completely symmetrical design structure due to its own functional limitations. For example, the film transfer openings, pumping channels, observation windows, etc. If the asymmetric structure is used as a part of the radio frequency circuit, it will inevitably cause uneven radio frequency distribution, which will affect the etching uniformity. It is found through testing that the etching rate of the substrate surface close to the asymmetric structure is different from that of other region...
Claims
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IPC IPC(8): H01J37/32H01L21/67H01R4/64
CPCH01J37/32715H01J37/32889H01L21/67069H01R4/64
Inventor 王智昊吴磊
Owner ADVANCED MICRO FAB EQUIP INC CHINA