TFT (Thin Film Transistor) array substrate structure for improving metal residues on side surface of Tapper and manufacturing method of TFT array substrate structure

Abstract

The invention discloses a TFT (Thin Film Transistor) array substrate structure for improving Tapper side metal residue and a manufacturing method thereof, the TFT array substrate structure comprises a TFT side glass substrate and is characterized in that the glass substrate is provided with a GE metal layer / inorganic film layer mixed barrier layer, the inorganic film layers are flush with the upper surface of the GE metal layer, the inorganic film layers are arranged on the two sides of the GE metal layer, and the GE metal layer is arranged on the lower surface of the GE metal layer. The acute included angle between the inclined face of the inorganic film layer and the glass substrate is smaller than 50 degrees, a GI insulating layer is arranged on the GE metal layer / inorganic film layer mixed barrier layer, and a PV insulating layer is arranged on the GI insulating layer. According to the invention, the inorganic film layer is lapped on the side surface of the existing GE taper, and the problem of large angle of the original GE taper is solved by utilizing the low taper of the lapped inorganic film layer, so that metal residues caused by overlarge taper are avoided, and the purpose of improving the product yield is achieved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT array substrate structure and a manufacturing method thereof for improving the metal residue on the side of the Taper. Background technique [0002] IGZO is an amorphous oxide containing indium, gallium and zinc. The carrier mobility is 20 to 30 times that of amorphous silicon, which can greatly improve the charge and discharge rate of TFT to the pixel electrode, improve the response speed of the pixel, and have better performance. Fast panel refresh rate, enabling ultra-high resolution TFT-LCD. At the same time, the existing amorphous silicon production line can be compatible with the IGZO process with only minor modifications, so lower temperature polysilicon (LTPS) is more competitive in terms of cost. [0003] At this stage, as the market demand for narrow borders of LCD displays is obvious, and low-cost, high-resolution IGZO panels have gradually become a hot spot fo...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a TFT array substrate structure with improved metal residue on the side of the Taper and its manufacturing method. By lapping a layer of SiOx film on the side of the existing GE Taper, the low Taper of the lapped SiOx is used to cover the original The problem of the large angle of the GE Taper avoids the metal residue caused by the excessive size of the Taper, so as to achieve the purpose of improving the product yield

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