Corner or side edge contact impact-force-free die bonding method

Abstract

The invention provides a corner or side edge contact impact-force-free die bonding method, which comprises the following steps that a die bonding device picks up a crystal grain, and the surface of the crystal grain is free of solder balls and copper columns; the crystal fixing device moves the crystal grains to one side of the crystal grain placing area, and the surface of the substrate is free of solder balls and copper columns; the die bonding device blows the corners or the side edges of the crystal grains through positive pressure, so that the corners or the side edges of the crystal grains are bent and deformed to contact the crystal grain placing area; a bonding wave is formed after the corners or the side edges of the crystal grains are in contact with the crystal grain placing area, and the bonding wave is expanded from the corners of the crystal grains to opposite angles or expanded from the side edges of the crystal grains to opposite sides, so that the crystal grains are gradually separated from the crystal fixing device and are fixed on the crystal grain placing area; and the crystal grain is completely fixed on the crystal grain placing area. Therefore, the contact between the corners or the side edges of the crystal grains and the substrate is controlled through the positive pressure without impact force, the force is extremely small, and the crystal grains cannot be damaged.

Description

technical field [0001] The present invention relates to a die-bonding method, in particular to a non-impact die-bonding method for fixing crystal grains on the corners or sides of a substrate. Background technique [0002] Integrated circuits are fabricated on a semiconductor wafer in a large number of ways and through multiple procedures, and the wafer is further divided into multiple dies. In other words, a die is an unpackaged small piece of integrated circuit body made of semiconductor material. A plurality of divided dies are neatly attached to a carrier device, and then a carrier frame is responsible for transporting the carrier device, and then the plurality of dies are sequentially transferred to a plurality of die placement areas of the substrate, which is convenient for subsequent processing procedures . [0003] Wafer-to-wafer direct bonding technology has been around for many years and belongs to the front-end process, which can easily control cleanliness and c...

AI Technical Summary

Problems solved by technology

The problem with wafer-to-wafer direct bonding is that it is not easy to apply to a system on a chip

The problem with this technology is that it is easy for the crystal grains and the substrate to enclose air bubbles together to produce voids, resulting in the incomplete adhesion between the crystal grains and the substrate, resulting in the subsequent processing of the crystal grains being easily affected by the air bubbles, reducing the Yield rate of products made by subsequent processing

The problem of this technology is: First, the crystal grain has a certain mass. Under the influence of gravity, the crystal grain falls to the grain placement area at a certain acceleration, which will generate a large impact force, so that the crystal grain contacts the substrate. and damaged; secondly, it is difficult to accurately place the die on the die placement area

The problem of this technology is: First, when the die-bonding device moves toward the substrate, the elastic members will provide a large mass inertia of the die, resulting in a large impact force and damage to the die when it contacts the substrate; Second, because the size of the die-bonding device itself is small, the elastic parts are very small, difficult to assemble, and the manufacturing cost is high

[0010] In addition, when the above three die bonding methods are bonded to the substrate, the bonding speed of the die is too fast, causing the die to be easily damaged, skewed or bent fold

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