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Quantum dot solution injection method, light color conversion structure and light-emitting chip

A quantum dot solution and light-emitting chip technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of insufficient injection of quantum dot solution, leakage of blue light, uneven color conversion, etc., and achieve good color conversion effect and better performance Good, avoid light leakage effect

Pending Publication Date: 2022-07-08
HCP TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, the quantum dot solution containing quantum dots is generally injected into the holes by natural leveling methods such as dots, coating, and inkjet printing. sufficient, resulting in uneven color conversion, blue light leakage, etc.

Method used

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  • Quantum dot solution injection method, light color conversion structure and light-emitting chip
  • Quantum dot solution injection method, light color conversion structure and light-emitting chip
  • Quantum dot solution injection method, light color conversion structure and light-emitting chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] This embodiment provides a quantum dot solution injection method, which is used for quantum dot injection in a light-color conversion structure, so as to convert the light emitted by the LED chip into a target light color. The light-emitting surface of the chip is provided with a light-color conversion structure, so that the blue LED chip is used to emit red light, green light, etc.

[0034] see Figure 1 to Figure 5 , the quantum dot solution injection method provided in this embodiment includes the following steps S1 to S7.

[0035] S1, providing a quantum dot solution containing quantum dots and a porous structure 2 having holes 1 for filling the quantum dot solution.

[0036] Among them, the porous structure 2 such as figure 1 , figure 2 As shown, the porous structure 2 can be a sheet-like structure with a plurality of holes 1, such as a sapphire substrate with a plurality of holes. After the quantum dot solution is injected into the holes 1 of the porous struct...

Embodiment 2

[0050] see Image 6 , which is different from the first embodiment above, in this embodiment, the sequence of vacuuming and arranging the quantum dot solution on the surface of the porous structure 2 is changed, and the above steps S4 and S5 are replaced by steps S01-S03, and the following steps are performed in sequence. Steps S01, S02, S03:

[0051] S01, put the porous structure 2 into the vacuum chamber 5, such as Image 6 As shown in (b), the vacuum is evacuated to the second vacuum degree.

[0052] S02, the quantum dot solution 3 is arranged on the surface of the porous structure 2 where the holes 1 are exposed.

[0053] S03 , maintaining the second vacuum degree for a fourth period of time, so that the hole 1 is fully injected with the quantum dot solution 3 .

[0054] In this embodiment, the quantum dot solution 3 is also dropped into the local area of ​​the porous structure 2 where the surface of the hole 1 is exposed, and then the quantum dot solution 3 in the loca...

Embodiment 3

[0057] The difference from the first embodiment above is that in this embodiment, the above step S5 is replaced by the following steps S51-S56:

[0058] S51 , putting the porous structure 2 into the vacuum chamber, evacuating to a third degree of vacuum, and maintaining the third degree of vacuum for a fifth period of time.

[0059] S52, vent the vacuum.

[0060] S53, vacuuming again to the fourth vacuum degree, and maintaining the fourth vacuum degree for a seventh period of time.

[0061] S54, vent the vacuum.

[0062] S55 , vacuuming to the fifth vacuum degree again, and maintaining the fifth vacuum degree for an eighth time period.

[0063] S56, vent the vacuum.

[0064] Wherein, the third vacuum degree, the fourth vacuum degree, and the fifth vacuum degree may be the same, for example, less than -100kPa; the fifth, seventh, and eighth durations may be the same, for example, 4 minutes, 5 minutes . After the vacuum is released, the gas in the vacuum chamber will give t...

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Abstract

The invention discloses a quantum dot solution injection method which comprises the following steps: firstly, carrying out pretreatment operation on a porous structure, removing water vapor of the porous structure and cleaning stains on the surface and / or in holes of the porous structure, so that a quantum dot solution can better permeate into the holes; then, a quantum dot solution is arranged on the surface, where the holes are exposed, of the porous structure, vacuumizing is conducted to enable the environment where the porous structure is located to be a vacuum environment, gas in the holes can be pumped out through vacuumizing, the quantum dot solution can permeate into the holes conveniently, the quantum dot solution can be fully injected into the holes, light leakage can be avoided, and the quality of the product is improved. According to the light color conversion structure, a good color conversion effect is achieved, gas in the quantum dot solution can be pumped out while vacuumizing is conducted, and the light color conversion structure with better performance is obtained. Meanwhile, the invention further provides a light color conversion structure and a light-emitting chip which adopt the injection method to inject the quantum dot solution.

Description

technical field [0001] The invention relates to the technical field of display, in particular to a quantum dot solution injection method, a light-color conversion structure and a light-emitting chip. Background technique [0002] Quantum dot (QD) materials have the characteristics of high color purity, tunable emission color and high fluorescence quantum yield due to their excellent optoelectronic properties. At present, the display application of quantum dot materials is mainly based on their color conversion properties, usually , using ultraviolet light or blue light as the excitation source, and using green light and red light quantum dots as the conversion layer material to obtain the required green light or red light, so that full-color display can be realized. [0003] At present, one of the ways to use blue light as an excitation source to achieve red (green) light emission is to remove the sapphire substrate of the original blue LED by laser lift off (LLO) technology...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/50
CPCH01L33/005H01L33/508H01L33/502H01L2933/0041
Inventor 薛水源侯辉庄文荣孙明
Owner HCP TECH CO LTD
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