Photoresist stripping liquid and preparation method thereof

A technology of photoresist and stripping solution, which is applied in the processing of photosensitive materials, etc., can solve the problems of increasing the difficulty and cost of product anti-corrosion process, easy-to-corrode substrate materials, etc., and achieve good deglue effect and good stability

Pending Publication Date: 2022-07-12
芯越微电子材料(嘉兴)有限公司
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Problems solved by technology

The above stripping solution is easy to corrode the substrate material after encountering water, which significantly increases the difficulty and cost of the anti-corrosion process of the product

Method used

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  • Photoresist stripping liquid and preparation method thereof
  • Photoresist stripping liquid and preparation method thereof
  • Photoresist stripping liquid and preparation method thereof

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preparation example Construction

[0045] The present invention provides a method for preparing a photoresist stripping solution according to any one of the above technical solutions, comprising the following steps:

[0046] The cyclic organic amine, alcohol ether organic solvent, nitrogen-containing organic solvent and corrosion inhibitor are mixed and dissolved with stirring, and then filtered.

[0047] The photoresist stripping solution of the present invention can be dissolved by adding the above-mentioned components in sequence, and the exothermic phenomenon of the organic base should be controlled during the dissolving process. The filter element is 1 μm or less.

[0048] The present invention provides a method for using the photoresist stripping solution described in any one of the above technical solutions, including:

[0049] The photoresist stripping solution described in any one of the above is used to clean the substrate containing the photoresist film by means of soaking or spraying, and then clea...

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Abstract

The invention provides a photoresist stripping liquid. The photoresist stripping liquid comprises the following raw materials in parts by weight: 0.5-30 parts of cyclic organic amine; 1-60 parts of an alcohol ether organic solvent; 1 to 50 parts of a nitrogen-containing organic solvent; and 0.01 to 10 parts of a corrosion inhibitor. The specific cyclic organic amine is adopted, the specific organic solvent and the corrosion inhibitor are combined, and the specific proportion is matched, so that the finally prepared photoresist stripping liquid is good in stability and good in photoresist stripping effect, and does not corrode substrates such as an aluminum grid, especially a copper grid.

Description

technical field [0001] The invention relates to the technical field of chemical etching, in particular to a photoresist stripping solution and a preparation method thereof. Background technique [0002] The lithography process is one of the most important steps in semiconductor and display manufacturing. The main function is to copy the pattern on the mask plate to the silicon wafer or other substrates to prepare for the next step of etching or ion implantation. In the photolithography process, a layer of photoresist needs to be coated on the substrate. After exposure to ultraviolet light, the chemical properties of the photoresist change. After developing, the exposed positive photoresist (negative photoresist) The glue is the unexposed area is developed and removed) will be removed, thereby realizing the transfer of the circuit pattern from the mask to the photoresist. After an etching process, the circuit pattern is transferred from the photoresist to the substrate. Af...

Claims

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Application Information

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IPC IPC(8): G03F7/42
CPCG03F7/422G03F7/425
Inventor 刘江华尹淞计伟於婷鲁晨泓
Owner 芯越微电子材料(嘉兴)有限公司
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