Anti-ferroelectric capacitor and preparation method thereof
A capacitor and antiferroelectric technology, applied in the field of memory, can solve the problems of poor energy storage capacity of electrochemical capacitors, and achieve the effects of high-quality bonding, increased flexibility, and improved flexibility.
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Embodiment 1
[0037] The first embodiment of the present invention provides an antiferroelectric capacitor, such as figure 1 As shown, it includes: a substrate 101 , a first functional layer 102 , a lower electrode layer 103 , a dielectric layer 104 , a second functional layer 105 and an upper electrode layer 106 . The first functional layer 102 is located on the substrate 101, the lower electrode layer 103 is located on the first functional layer 102, the dielectric layer 104 is located on the lower electrode layer 103, the second functional layer 105 is located on the dielectric layer 104, and the upper electrode Layer 106 is located on top of second functional layer 105 . The material of the first functional layer 102 is aluminum oxide, and the material of the second functional layer 105 is aluminum oxide, zirconium oxide or hafnium oxide.
[0038] Specifically, the material of the substrate 101 is polyimide PI. The first functional layer 102 is aluminum oxide Al 2 O 3 film. Since a...
Embodiment 2
[0085] Based on the same inventive concept, the second embodiment of the present invention also provides a method for preparing an antiferroelectric capacitor, such as Figure 5 shown, including:
[0086] S201, forming a first functional layer on a substrate, wherein the material of the first functional layer is aluminum oxide;
[0087] S202, forming a lower electrode layer on the first functional layer;
[0088] S203, forming a dielectric layer on the lower electrode layer;
[0089] S204, forming a second functional layer on the dielectric layer, wherein the material of the second functional layer includes aluminum oxide, zirconium oxide or hafnium oxide;
[0090] S205, forming an upper electrode layer on the second functional layer.
[0091] As an optional embodiment, the forming the first functional layer on the substrate includes:
[0092] The first functional layer is deposited on the substrate by an atomic layer deposition process.
[0093] As an optional embodiment...
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Abstract
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Application Information
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