Trench gate type super-junction IGBT device structure and manufacturing method thereof
A device structure and trench gate technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased device leakage, reduced yield, and poor reliability, so as to reduce device damage and reduce device damage. The effect of improving the yield and improving the resistance to breakdown
Pending Publication Date: 2022-07-29
上海埃积半导体有限公司
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Problems solved by technology
The trenching process is required in both processes, but the trenching process will have a stress effect on the wafer, and the multi-channel trenching process is more likely to cause increased device leakage, poor reliability, and easily lead to debris, thereby Reduce yield
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[0051] In the following description, for the purpose of illustration rather than limitation, specific details such as a specific system structure and technology are set forth in order to provide a thorough understanding of the embodiments of the present application. However, it will be apparent to those skilled in the art that the present application may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of hierarchy and block structures in well-known IGBT devices are omitted so as not to obscure the description of the present application with unnecessary details.
[0052]It is to be understood that, when used in this specification and the appended claims, the term "comprising" indicates the presence of the described feature, integer, step, operation, element and / or component, but does not exclude one or more other The presence or addition of features, integers, steps, operations, elements, components and / or collections....
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The invention discloses a trench gate type super-junction IGBT device structure and a manufacturing method thereof. The manufacturing method comprises the following steps: digging a plurality of deep grooves in an N-base region; after the deep groove is filled with P-type silicon, the P-type silicon is etched back to form a first deep groove region, so that the first deep groove region and the adjacent N-base region form a transverse PN junction; depositing an insulating material on the P-type silicon in the first deep groove region to form a gate insulating region; forming a gate oxide layer on the side wall of the deep groove above the gate insulation region in a thermal oxidation mode; and filling a polycrystalline silicon material in the gate oxide layer, etching to form a polycrystalline silicon gate region, and taking the polycrystalline silicon gate region as a second deep groove region. According to the manufacturing method, device damage caused by a multi-channel trench digging process in the IGBT device manufacturing process can be reduced, and the yield of the IGBT device is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a trench gate type super-junction IGBT device structure and a manufacturing method. Background technique [0002] The existing super-junction IGBT device structure is mainly formed by two processes. The first is a multiple epitaxial doping process, and the second is a deep trench filling P-type silicon process. The super junction withstand voltage layer realized by the trench filling process is easier to achieve a smaller aspect ratio than the super junction withstand voltage layer formed by the multi-epitaxial technology. Lower Ron.sp. [0003] In the process of using a trench-type super junction IGBT device formed by a deep trench filling process with P-type silicon, it is usually necessary to go through two trenching processes. , and then dig a shallow trench to form a trench gate structure. The trenching process needs to be performed in both processes, ...
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IPC IPC(8): H01L29/739H01L29/06H01L29/10H01L29/51H01L21/331
CPCH01L29/0634H01L29/1004H01L29/511H01L29/7397H01L29/66348
Inventor 程炜涛姚阳
Owner 上海埃积半导体有限公司