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SNS Josephson junction based on VN and preparation method thereof

A technology of junction barrier and top electrode, which is applied in the field of superconducting electronics, can solve the problems of barrier regulation difficulty and unclear interface, and achieve the effect of adjustable resistivity, good uniformity and high interface flatness

Pending Publication Date: 2022-07-29
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of SNS Josephson junction based on VN and preparation method thereof, be used for solving the problem of each film layer in functional material layer when preparing Josephson junction in the prior art. The interface between them is not clear and the barrier control at the interface of the barrier layer is difficult

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  • SNS Josephson junction based on VN and preparation method thereof
  • SNS Josephson junction based on VN and preparation method thereof
  • SNS Josephson junction based on VN and preparation method thereof

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Embodiment 1

[0050] This embodiment provides a preparation method of an NbN-based SNS Josephson junction, such as figure 1 As shown, it is shown as a flow chart of the preparation method of the SNS Josephson junction, comprising the following steps:

[0051] S1: provide a substrate;

[0052] S2: adopting DC reactive magnetron sputtering to form a functional material layer on the substrate, and the functional material layer includes a stacked NbN bottom layer, a VN barrier layer and a NbN top layer;

[0053] S3: etching the functional material layer to form a functional layer including a bottom electrode, a VN junction barrier layer and a top electrode, and forming an isolation layer covering the exposed surface of the functional layer and the upper surface of the substrate;

[0054] S4: forming a first contact hole and a second contact hole in the isolation layer, and the top electrode is exposed at the bottom of the first contact hole, and the bottom electrode is exposed at the bottom of t...

Embodiment 2

[0088] This embodiment provides a VN-based SNS Josephson junction, such as Figure 9 As shown, it is a schematic diagram of the cross-sectional structure of the SNS Josephson junction, and the VN-based SNS Josephson junction is fabricated by the preparation method of the VN-based SNS Josephson junction described in the first embodiment.

[0089] Specifically, the SNS Josephson junction of the VN includes the substrate 1 , the functional layer 14 , the isolation layer 2 , the first wiring part 31 , the second wiring part 32 , the The first through hole 311 and the second through hole 321, wherein the functional layer 14 is located on the substrate 1, and the functional layer 14 includes the bottom electrode 111 stacked upward, the VN junction potential The barrier layer 121 and the top electrode 131, the isolation layer 2 covers the upper surface of the substrate 1 and the exposed surface of the functional layer 14, and the isolation layer 2 is provided with a bottom to expose ...

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Abstract

The invention provides a VN-based SNS Josephson junction and a preparation method thereof.The preparation method of the VN-based SNS Josephson junction comprises the following steps that a substrate is provided, a functional material layer comprising an NbN bottom layer film, a VN potential barrier layer and an NbN top layer film is formed on the substrate through direct-current reactive magnetron sputtering, and the VN-based SNS Josephson junction is obtained; etching the functional material layer to form a functional layer comprising a bottom electrode, a VN junction barrier layer and a top electrode, forming an isolation layer covering the exposed surface of the functional layer and the upper surface of the substrate, forming a first contact hole and a second contact hole in the isolation layer, and forming a wiring layer covering the isolation layer and filling the first contact hole and the second contact hole, the wiring layer is etched to form a first wiring portion and a second wiring portion. The VN barrier layer which is metallic at low temperature is formed by adopting a direct current reaction magnetron sputtering method, so that the VN junction barrier layer which is high in flatness, stable in component, stable in resistivity and good in uniformity is obtained, and the quality of the Josephson junction is improved.

Description

technical field [0001] The invention belongs to the field of superconducting electronics, and relates to a VN-based SNS Josephson junction and a preparation method thereof. Background technique [0002] The advantages of speed and power consumption of superconducting single flux quantum (SFQ) circuit with Josephson junction as the basic unit make it have broad application in high-performance computing, voltage reference and high-precision analog-to-digital conversion. application prospects. At present, the mainstream of superconducting integrated circuits is based on superconducting Nb materials and Nb / Al-AlOx / Nb Josephson junctions with external parallel resistors. However, due to the small inductance, energy gap and bypass resistors of Nb, the material and structure This limits the integration of the circuit and high-frequency applications. The parasitic inductance and capacitance introduced by the ultra-thin (~1-3nm) barrier layer of the SIS junction and the shunt resis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L39/24H01L39/22H10N60/01
CPCH10N60/12H10N60/0912
Inventor 张露陈垒王镇
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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