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Semiconductor device and method of manufacturing semiconductor device

A semiconductor and base layer technology, applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as voids, reduced strength of stacked layers, etc.

Pending Publication Date: 2022-08-02
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a vertical connection structure for connection between wirings of stacked layers may generate defects such as voids, which may cause a decrease in the strength of stacked layers in subsequent processes.

Method used

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  • Semiconductor device and method of manufacturing semiconductor device
  • Semiconductor device and method of manufacturing semiconductor device
  • Semiconductor device and method of manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Now, a semiconductor device according to the present inventive concept will be described below with reference to the accompanying drawings.

[0023] figure 1 Cross-sectional views illustrating semiconductor devices according to some embodiments of the inventive concepts are shown. figure 2 and image 3 shows showing figure 1 A magnified view of part A.

[0024] refer to figure 1 and figure 2 , the semiconductor device may include a base layer 110 , a dielectric layer 120 , a conductive pattern 200 , a first protective layer 310 and a second protective layer 320 .

[0025] The base layer 110 may be provided. In this specification, the base layer 110 may be a part of one of a redistribution layer, an interposer, and a wiring substrate on / in which wiring is formed. In this case, the base layer 110 may correspond to an internal wiring layer of a wiring substrate or the like, and the dielectric layer 120 , the conductive pattern 200 , the first protective layer 310 ...

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PUM

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Abstract

The invention discloses a semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device includes: a dielectric layer; a trench formed in the dielectric layer; a metal pattern conformally covering a top surface of the dielectric layer, an inside surface of the trench, and a bottom surface of the trench; a first protective layer conformally covering the metal pattern; and a second protective layer covering the first protective layer. A cavity is formed in the trench. The cavity is surrounded by a first protective layer. The first protective layer has an opening penetrating the first protective layer and extending from a top surface of the first protective layer. The opening is connected to the cavity. A portion of the second protective layer extends into the opening and closes the cavity.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2021-0014033 filed in the Korean Intellectual Property Office on February 1, 2021, the disclosure of which is incorporated herein by reference in its entirety. technical field [0002] The inventive concept relates to a semiconductor device and a method of fabricating the same. Background technique [0003] Semiconductor devices play an important role in the electronics industry due to their small size, multifunctionality, and / or low manufacturing cost. Semiconductor devices may include semiconductor memory devices that store logic data, semiconductor logic devices that process operations on logic data, and hybrid semiconductor devices that have both memory elements and logic elements. With the advanced development of the electronic industry, high integration of semiconductor devices has been increasingly required. [0004] The recent rapid increase in the degree of integration of semiconductor devi...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/76804H01L21/76816H01L21/76879H01L23/3192H01L2224/18H01L2924/181H01L2924/15311H01L23/49822H01L23/49894H01L21/4857H01L23/49816H01L23/5226H01L2924/00012H01L21/76832H01L21/76834H01L21/76831H01L23/5283H01L23/53295H01L24/02H01L24/05H01L21/481H01L24/13H01L2224/02311H01L2224/02206H01L2224/02215H01L2224/0221H01L2224/05548H01L24/16H01L2224/16227H01L2224/13024
Inventor 安修旻姜秉浚金知映朴海锡张喆淳
Owner SAMSUNG ELECTRONICS CO LTD