In-memory computing circuit based on local multiplication-global addition structure, memory and equipment

Abstract

The invention provides an in-memory computing circuit based on a local multiplication-global addition structure. The in-memory computing circuit comprises a plurality of sub-computing arrays, a plurality of word lines, a plurality of bit lines, a plurality of complementary bit lines and a plurality of source lines, the sub-calculation arrays in each row are connected with a common word line, and the sub-calculation arrays in each column are connected with a common bit line, a common complementary bit line and a common source line; the calculation unit in each sub calculation array comprises a first transistor, a first memory, a second transistor and a second memory; the grid of the transistor is connected with the word line, and the source is connected with the source line; the drain of the first transistor is connected with a first memory, and the other end of the first memory is connected with a bit line; the drain of the second transistor is connected with the second memory, and the other end of the second memory is connected with the complementary bit line; the grid electrode of the third transistor is connected with the source line, the source electrode is grounded, and the drain electrode is connected with the source electrode of the fourth transistor; the grid of the fourth transistor is connected with the input line, and the drain is connected with the calculation line through the switch. The invention also provides a memory and electronic equipment.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor integrated circuits, and in particular, to an in-memory computing circuit, a memory and an electronic device based on a local multiply-global add structure. Background technique [0002] By effectively reducing the power consumption and delay caused by frequent memory accesses, the in-memory computing technology based on new non-volatile memory is expected to greatly improve computing energy efficiency and computing power, thus providing data-centric computing tasks represented by artificial intelligence. Provide hardware support. Among them, Resistive Random Access Memory (RRAM) shows great potential in terms of operation power consumption, integration density and process compatibility. As a new type of non-volatile memory, resistive memory has the advantages of low power consumption, small delay, high density and high process compatibility. It can greatly reduce the power consum...

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Problems solved by technology

[0004] In order to solve the above-mentioned problems in the prior art, the present disclosure provides an in-memory computing circuit, memory and electronic equipment based on a local multiplication-integral addition structure, aiming to solve the problem of excessive convergence current of traditional 1T1R circuits and improve high circuit integration Degree and technical issues such as reducing circuit power consumption

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