The invention provides an in-memory computing circuit based on a local multiplication-global addition structure. The in-memory computing circuit comprises a plurality of sub-computing arrays, a plurality of word lines, a plurality of bit lines, a plurality of complementary bit lines and a plurality of
source lines, the sub-calculation arrays in each row are connected with a
common word line, and the sub-calculation arrays in each column are connected with a common
bit line, a common complementary
bit line and a
common source line; the calculation unit in each sub calculation array comprises a first
transistor, a first memory, a second
transistor and a second memory; the grid of the
transistor is connected with the word line, and the source is connected with the source line; the drain of the first transistor is connected with a first memory, and the other end of the first memory is connected with a
bit line; the drain of the second transistor is connected with the second memory, and the other end of the second memory is connected with the complementary bit line; the grid
electrode of the third transistor is connected with the source line, the source
electrode is grounded, and the drain
electrode is connected with the source electrode of the fourth transistor; the grid of the fourth transistor is connected with the input line, and the drain is connected with the calculation line through the switch. The invention also provides a memory and
electronic equipment.