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Insulator base silicon structure of plane dense picture composition and manufacture technology thereof

An insulator and silicon-based technology, which is applied in the field of insulator-based silicon structures, can solve the problems of time-consuming process steps, high cost, and lack of uniform silicon crystal structure.

Inactive Publication Date: 2004-06-23
IBM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This does not give the desired homogeneous silicon crystal structure
[0007] The second problem is the formation of bumps
The most serious consequence is the reduced ability to make small, densely patterned SOI and non-SOI regions
Moreover, these bumps are an obstacle in subsequent planarization steps, often requiring costly and time-consuming additional process steps
[0008] Insufficient filling of trenches using selective epitaxy shows that there is still a need to eliminate the silicon epitaxial growth of the silicon portion of the trench sidewalls

Method used

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  • Insulator base silicon structure of plane dense picture composition and manufacture technology thereof
  • Insulator base silicon structure of plane dense picture composition and manufacture technology thereof
  • Insulator base silicon structure of plane dense picture composition and manufacture technology thereof

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Embodiment Construction

[0027] The invention will now be explained with reference to the drawings, in which like numerals refer to like elements throughout. These figures are illustrative rather than restrictive and are included to facilitate explanation of the device of the present invention.

[0028] From figure 1 Initially, the first step in implementing the process of the invention involves obtaining a substrate 1 comprising a silicon wafer 10 on which an oxide layer 12 , a silicon layer 14 , and a nitride layer 18 have been formed. The substrate 1 (more precisely, the nitride layer 18 of the substrate 1 ) has an exposed surface 20 . The nitride layer 18 is selected from existing common nitrides such as silicon nitride, boron nitride, and oxynitride. In the preferred embodiment silicon nitride is used to form nitride layer 18 .

[0029] The substrate 1 may also comprise a protective oxide layer 16 . Protective oxide layer 16 disposed on silicon layer 14 prevents damage to silicon layer 14 whe...

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Abstract

A planar silicon-on-insulator (SOI) structure and a process for fabricating the structure. The SOI structure has a silicon wafer, an oxide layer, and a silicon layer. Trenches are formed, extending from the top surface of the structure to the silicon wafer, and are filled with a semiconductor. The trenches have a top, a bottom, and side walls. The side walls have side-wall silicon portions. The side-wall silicon portions of the trench side walls are covered by trench side-wall oxide layers. A protective side wall extends over the trench side walls and trench side-wall oxide layers from the trench top to the trench bottom.

Description

technical field [0001] The present invention relates to silicon-on-insulator (SOI) structures, and more particularly to planar densely patterned SOI structures and methods of fabricating such structures. Background technique [0002] A patterned SOI (silicon-on-insulator) structure consists of SOI and non-SOI (or bulk silicon) regions. Patterned SOI structures are used in circuits that require both conventional and SOI devices. Such circuits include, for example, combinational logic random access memory (ML-DRAM) circuits. [0003] The process used to make patterned SOI wafers involves depositing epitaxial silicon in selectively formed trenches (selective epitaxy process). The development of the ability to etch narrow trenches in silicon substrates has increased the importance of selective epitaxy processes. If these narrow trenches can be successfully filled with silicon material, it is possible to form closely spaced silicon islands separated by insulating layers such a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H01L21/76H01L21/762H01L27/12
CPCH01L21/762H01L21/76278H01L21/76264H01L21/76
Inventor 埃芬迪·里奥班顿迪文德拉·K·萨丹纳多米尼克·J·谢皮斯格范·沙西蒂
Owner IBM CORP