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Compact inductive coupling low temperature plasma dry etching system

A low-temperature plasma and inductive coupling technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low etching rate, poor selectivity, and poor precision, and achieve high etching rate and high selectivity , the effect of improving production efficiency

Inactive Publication Date: 2004-09-29
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the shortcomings of poor precision, low etching rate, poor selectivity and large damage caused by the existing wet technology when etching III-V compounds, and solve the urgent need for a high-speed, low-damage , high precision and good selectivity of the etching method, research and invent a method that can overcome and solve the above shortcomings and problems, can produce fine graphics, does not affect semiconductor performance, device characteristics and service life, high precision, etch Compact Inductively Coupled Low Temperature Plasma Dry Etching System with High Speed, Good Selectivity and Less Damage

Method used

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  • Compact inductive coupling low temperature plasma dry etching system
  • Compact inductive coupling low temperature plasma dry etching system
  • Compact inductive coupling low temperature plasma dry etching system

Examples

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Effect test

Embodiment 1

[0010] Embodiment 1: Put the substrate to be etched 4-InSb (thickness 15 μm) into the reaction chamber 8, and vacuumize the reaction chamber 8. When the background vacuum degree of the reaction chamber 8 reaches 1.5×10 -2 Torr, the etching reaction gas CCl 2 f 2 ; Control the flow rate of reaction gas 2 milliliters / minute, continue vacuuming; -2 Torr, add the power source and bias power, and adjust the input power of the power source to 100W and the RF bias to 100W, generate plasma, and start etching; after 30 minutes of etching, stop the power output and bias power, turn off The gas falling into the reaction chamber 8, the vacuum device 11 is turned off, and the etching is completed; under the observation of the scanning electron microscope, it is found that there is good anisotropy, the surface of the sample is smooth, and the etching rate reaches 200nm / min.

Embodiment 2

[0011] Example 2: Change the etching conditions in Example 1 to: the reaction gas flow rate is 4 ml / min, the RF power is 400W, and the RF bias is 300W. After the reaction gas is introduced, the reaction chamber pressure is stabilized at 2×10 -2 Torr, other specific processes are the same as in Example 1, the etching time is shortened to 10 minutes, the etching rate reaches 600nm / min, and the surface of the sample is smooth and has good anisotropy.

Embodiment 3

[0012] Example 3: Change the etching conditions in Example 1 to: the reaction gas flow rate is 6 ml / min, the RF power is 800 W, and the RF bias is 900 W. After the reaction gas is introduced, the reaction chamber pressure is stabilized at 3×10 -2 Torr, other specific processes are the same as in Example 1, the etching time is shortened to 5 minutes, and the etching rate reaches 1200nm / min, but the surface morphology of the sample is not smooth, and there is a serious overetching phenomenon.

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Abstract

The present invention belongs to semiconductor producing equipment and technology. The dry etching system consists of measuring unit, RF bias power source, substrate stage, ICP coupling antenna, magnetically controlling coil, RF power source, reactor, pedestal, gas distributor and vacuum unit connected together. The dry etching process includes: producing plasma; bombarding the surface of substrate with plasma guided and bounded by externally applied RF bias power or magnetic field; composing the etching gas mixture; and etching. The said system and process can produce fine pattern and has no effect on the semiconductor performance and service life.

Description

(1) Technical field: [0001] The invention is a compact inductively coupled low-temperature plasma dry etching system, which belongs to semiconductor production equipment and technology, and particularly relates to the gas composition, gas distribution and process of III-V group compounds. (2) Technical background: [0002] With the improvement of the integration level of integrated circuits, the graphics of integrated circuits become more and more refined. III-V compound semiconductors have been widely used in the fields of microelectronics and optoelectronics due to their good optoelectronic properties, but the ability to finely etch III-V compounds has become a bottleneck restricting the application of III-V compound semiconductors. At present, most of the etching of III-V compounds still uses chemical wet etching such as acid and alkali. Due to the isotropic effect, it is difficult to etch fine patterns below 3 μm, and acid and alkali are easy to remain on the etched patt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065
Inventor 陈俊芳吴先球赵智昊符斯列赵文峰
Owner SOUTH CHINA NORMAL UNIVERSITY