Filmforming method and device

A film-forming method and a film-forming device technology, which can be applied to the device for coating liquid on the surface, electrical components, pre-treated surfaces, etc., can solve problems such as spending a lot of time

Inactive Publication Date: 2005-01-12
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, until now, the liquid film formation process and the drying process have been performed independently, so it takes a lot of time until the final coating film is formed

Method used

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  • Filmforming method and device
  • Filmforming method and device

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Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0042] figure 1 is a schematic configuration diagram of the film forming apparatus in the first embodiment of the present invention. figure 1 (a) is a plan view of the film forming device, figure 1 (b) is a sectional view. The film forming device can simultaneously perform a liquid film forming process and a drying process.

[0043] First, the structure for performing liquid film formation in the film forming apparatus will be described. Such as figure 1 (a), shown in (b), by the protective film dripping nozzle 102 and the nozzle moving mechanism (not shown) that makes this protective film dripping nozzle 102 move along the y direction (paper plane transverse direction) and diameter 200mm The substrate to be processed 110 is provided with a substrate to be processed moving table (not shown in the figure) that moves the substrate to be processed 110 along the x direction.

[0044] Next, the configuration of the apparatus for performing the drying process will be described....

no. 2 Embodiment approach

[0054] The device configuration of this embodiment is the same as that described in the first embodiment. figure 1 The apparatus shown is the same, and therefore description of the apparatus is omitted. The drying process will be described.

[0055] First, as in the first embodiment, a chemical solution is dropped onto the substrate 110 to be processed to start forming the liquid film 111 .

[0056] With the movement of the substrate 110 to be processed, the suction port of the suction nozzle 101 connected to the vacuum pump 103 sucks the solvent atmosphere on the liquid film 111 on the substrate 110 to be processed, and the first drying process starts.

[0057] Even after the suction nozzle 101 passes through the entire surface of the liquid film 111, from the +x side (coating start side) to the -x side (coating end side), there is still a lot of solvent remaining in the liquid film 111, and the thickness of the liquid film 111 is 10μm ( image 3 (a)).

[0058] As the sec...

no. 3 Embodiment approach

[0063] The device configuration of this embodiment is the same as that described in the first embodiment. figure 1 The apparatus shown is the same, and therefore description of the apparatus is omitted. The drying process will be described.

[0064] First, as in the first embodiment, a chemical solution is dropped onto the substrate 110 to be processed to start forming the liquid film 111 . However, in this embodiment, an interlayer insulating film (LKD21: manufactured by JSR) is sequentially dropped in a line shape (one-stroke shape) to form a liquid film 111 with a thickness of 40 μm on the entire surface of the substrate.

[0065] Along with the movement of the substrate 110 to be processed, the suction nozzle 101 connected to the vacuum pump 103 is covered on the substrate 110 to be processed, and the solvent atmosphere on the liquid film 111 is sucked away from the suction port, from the +x side (coating start side) The first drying process starts on the -x side (coatin...

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Abstract

The invention provides a film forming method and device. A liquid film formation section is composed of a resist dropping nozzle 102, a nozzle movement mechanism not shown in a figure that moves the resist dropping nozzle 102 in a y direction (a horizontal direction on page space), and the movement rest of the substrate 110 to be treated not shown in the figure where the substrate 110 to be treated having a diameter of 200 mm is installed and is moved in an x direction. A liquid film drying section is composed of a suction nozzle 101, and a vacuum pump 103 connected to the suction nozzle 101. Also, the movement rest of the substrate to be treated is also one of the components of the liquid film drying section. The invention is able to suppress the generation of film thickness distribution in an application film, and at the same time to shorten time for forming the application film.

Description

technical field [0001] The present invention relates to a film-forming method and a film-forming device used in the production of coating films in semiconductors (single wafer process (ウエハ process), exposure mask preparation process), and liquid crystal equipment production technology. Background technique [0002] The spin coating method that has been used in the lithography process before, because most of the liquid dripped on the substrate is discharged out of the substrate, and a few percent of the remaining liquid is used to form a film, the waste of the used liquid is large, and the discharged liquid There is a lot of liquid, which will also have a bad impact on the environment. In addition, on a square substrate or a circular substrate with a large diameter of 300 mm or more, turbulent flow is generated in the outer peripheral portion of the substrate, causing a problem of non-uniform film thickness in these portions. [0003] As a method of uniformly coating the ent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/16B05C5/02B05C11/10B05D3/00H01L21/027H01L21/20H01L21/30
Inventor 江间达彦伊藤信一
Owner KK TOSHIBA
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