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Apparatus and method for an integrated circuit having high Q reactive components

A technology of integrated circuits and circuits, applied in printed circuit manufacturing, multilayer circuit manufacturing, circuits, etc., can solve problems such as reducing the performance of functional circuits

Inactive Publication Date: 2005-01-19
ATMEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the parasitic reactance introduced by traditional packaging technology often seriously degrades the performance of functional circuits

Method used

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  • Apparatus and method for an integrated circuit having high Q reactive components
  • Apparatus and method for an integrated circuit having high Q reactive components
  • Apparatus and method for an integrated circuit having high Q reactive components

Examples

Experimental program
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Embodiment Construction

[0018] FIG. 11 shows a typical ball grid IC package including a chip 1102 mounted on a substrate 1112 and encapsulated by an encapsulant 1110 . Turning to FIG. 1, a laminated substrate 114 configured in accordance with a preferred mode of the invention includes single or multiple interconnected metal layers, each separated by a layer of insulating material. The uppermost interconnect layer shown in FIG. 1 includes a plurality of interconnect traces 120 and passive components 102-106. Specifically, elements 102 and 104 are capacitors, while element 106 is an inductor. Inductor 106 can be seen to include traces 122 and 124 . This interconnect layer is disposed on the upper surface 112 of the substrate 114 .

[0019] Referring to FIG. 2 , a side view of capacitor 102 taken along line 2 - 2 in FIG. 1 shows a portion of substrate 114 . Arranged on top of the insulating layer 202 is a metal layer 200 , which in turn is also placed on a further metal layer 204 . The illustrated c...

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PUM

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Abstract

In an IC packaging scheme, a multilayer substrate is composed of electrically conductive layers of interconnects, separated by insulative layers of epoxy resin or ceramic and connected by vias. Passive elements are integrated within the substrate at the definition stage during layout of the interconnects. The passives can be used to enhance the electrical performance of the active circuit die to a maximum extent allowed by the material technology used for the substrate. Material selection for the package is made to allow for the best passive integration for a given circuit design. Typical applications include power supply bypass capacitors, radio frequency tuning, and impedance matching. The incorporation of passives in the packaging substrate creates a new class of electrically tailorable packaging that can derive improved performance for any given die design over existing approaches.

Description

technical field [0001] The present invention relates generally to the packaging of semiconductor devices, and is particularly directed to the fabrication of high-Q reactive components in such packages. Background technique [0002] The present invention relates to the construction of high-Q passive components, such as those used in radio frequency equipment. The difficulty of introducing these components in a semiconductor chip is well known: the quality factor (Q) of the lumped and distributed reactive components depends mainly on the resistance of the metal, the dielectric loss, and the parasitic reactance. The actual values ​​of the inductance and capacitance of the lumped elements are greatly limited by the available area of ​​the semiconductor chip. Similarly, the reason why distributed transmission line resonators are difficult to configure on a semiconductor chip at a desired frequency also lies in the limitation of space. A common convention is to place the lumped ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/12H01L23/538H01L23/66H01L25/00H01L25/16H01L27/06H01L27/08H05K1/16H05K3/46
CPCH01L25/16H01L2924/15311H01L27/0641H01L2224/16H05K2201/09263H01L23/5383H01L23/66H01L23/5386H01L2224/16235H05K3/4611H05K2201/10674H05K1/167H05K1/165H05K2201/097H05K3/4644H05K2201/09672H01L27/08H01L2924/3011H01L2924/01079H05K1/162H05K1/16
Inventor 小R·J·扎夫里尔D·C·鲍曼
Owner ATMEL CORP