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Surface emitting laser, photodiode, manufacturing method thereof and photoelectric mixed carrier circuit

A surface-emitting laser, photodiode technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of electrode peeling, inability to install surface-emitting lasers firmly, electrode surface depression, etc., to suppress electrode surface depression, eliminate The effect of electrode peeling and trouble reduction

Inactive Publication Date: 2005-04-27
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, in the surface emitting laser with the above configuration, since the electrodes are laminated on the polyimide-based resin which is softer than the semiconductor material, deformation such as denting of the electrode surface may occur during mounting.
In this case, the electrode will be peeled off, and there is a problem that the surface emitting laser cannot be firmly mounted.

Method used

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  • Surface emitting laser, photodiode, manufacturing method thereof and photoelectric mixed carrier circuit
  • Surface emitting laser, photodiode, manufacturing method thereof and photoelectric mixed carrier circuit
  • Surface emitting laser, photodiode, manufacturing method thereof and photoelectric mixed carrier circuit

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Embodiment Construction

[0045] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0046] figure 1 It is a sectional view showing the surface emitting laser of the present invention. figure 2 It is a plan view showing the surface emitting laser of the present invention.

[0047] Such as figure 1 and figure 2 As shown, the surface-emitting laser 100 of the present invention is composed of the following parts: a high-resistance semiconductor substrate 1 made of GaAs; a semiconductor substrate disposed on the upper surface of the semiconductor substrate 1 and divided into a light-emitting part 2A and a reinforcing part 2B by a concave part 6 laminated body 2 ; insulating layer 3 provided on the upper surface of semiconductor laminated body 2 ; and p-type ohmic electrode 4 and n-type ohmic electrode 5 provided on the upper surface of insulating layer 3 .

[0048] The semiconductor laminate 2 is composed of the following parts: a p-type contact layer...

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Abstract

The invention provides a surface emitting laser and a photodiode both of which can be mounted firmly even when they are mounted by flip-chip bonding and can be modulated at high speeds, and to provide methods of manufacturing the laser and photodiode and a photoelectric combination circuit using them. In a semiconductor laminate laminated upon a semiconductor substrate, a light emitting section and reinforcing sections are formed with recessed sections between them and p- and n-type ohmic electrodes are respectively formed on the top faces of the reinforcing sections. The p-type ohmic electrode is buried in one of the recessed sections, is electrically connected to a p-type contact layer through a contact hole vertically formed in polyimide, and can supply a current to a light emitting section in the thickness direction of the section. In each recessed section, in addition, a groove section is formed to reach the substrate to suppress the parasitic capacitance generated between the electrodes.

Description

technical field [0001] The present invention relates to a surface emitting laser used in digital optical communication and a manufacturing method thereof. Background technique [0002] Generally, a Vertical Cavity Surface Emitting Laser (VCSEL: Vertical Cavity Surface Emiting Laser) is configured in such a way that the semiconductor laminate on which the active layer and the distributed reflection layer are stacked is etched in the vertical direction to form a convex light emitting part, and the laser beam is emitted from the The upper surface of the light emitting part has an opening formed on the light emitting surface to emit light. Here, in order to generate laser light, upper and lower electrodes sandwiched by insulating layers are formed on the semiconductor laminate including the light emitting part, and a current is supplied to the active layer by applying a voltage so that current flows in the thickness direction of the light emitting part. [0003] However, if the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/122G02B6/42H01L31/00H01L31/10H01S5/00H01S5/022H01S5/18H01S5/183H01S5/30
Inventor 北村升二郎井出次男原田笃金子丈夫
Owner SEIKO EPSON CORP