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Process for preparing zero-shinkage low-temp, co-fired ceramic multi-layer baseplate

A technology of low-temperature co-fired ceramics and multi-layer substrates, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, electrical components, etc., and can solve problems such as large plane shrinkage

Inactive Publication Date: 2005-07-27
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a process for preparing zero-shrinkage low-temperature co-fired ceramic multilayer substrates to meet the requirements of assembly precision problem

Method used

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  • Process for preparing zero-shinkage low-temp, co-fired ceramic multi-layer baseplate
  • Process for preparing zero-shinkage low-temp, co-fired ceramic multi-layer baseplate
  • Process for preparing zero-shinkage low-temp, co-fired ceramic multi-layer baseplate

Examples

Experimental program
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Effect test

Embodiment 1

[0018] (1) Select CaO-Al 2 o 3 -B 2 o 3 -SiO 2 Glass and Al 2 o 3 Powder is made into glass ceramic powder, of which glass accounts for 55% (100.6g), Al 2 o 3 Accounting for 45% (82.0 grams), mixed with binder PVB, plasticizer DBP, solvent toluene, ball milled for 4 hours, and made into slurry;

[0019] (2) casting the slurry into a green sheet with a thickness of 125 μm, cutting it into a square, and punching;

[0020] (3) Print through holes and wiring patterns layer by layer according to the designed pattern. The through-hole conductor paste is Ag-Pd conductor paste, and the inner and outer surface patterns use Ag-Pt conductor paste;

[0021] (4) Laminate 10 green sheets sequentially, and then place an Al layer with a thickness of 0.2 mm on the bottom and top of the stack. 2 o 3 For green sheets, heat press for 1 minute at a temperature of 80°C-100°C and a pressure of 20MPa-25MPa;

[0022] (5) Continue to raise the furnace temperature to 400-450°C at a speed of ...

Embodiment 2

[0027] (1) Glass, Al 2 o 3 Raw material is identical with embodiment 1, and proportioning is different. Of which glass accounted for 45% (81.8 grams), Al 2 o 3 Accounting for 55% (100.2g), mixed with binder PVB, plasticizer DBP, solvent toluene, ball milled for 4 hours, and made into slurry;

[0028] (2) casting the slurry into a green sheet with a thickness of 125 μm, cutting it into a square, and punching;

[0029] (3) Print through holes and wiring patterns layer by layer according to the designed pattern. The through-hole conductor paste is Ag-Pd conductor paste, and the inner and outer surface patterns use Ag-Pt conductor paste;

[0030] (4) Laminate 10 green sheets in turn, and then place an Al with a thickness of 1.2 mm on the bottom and top of the stack. 2 o 3 For ceramic green sheets, keep warm for 1 minute at a temperature of 80°C-100°C and a pressure of 20MPa-25MPa;

[0031] (5) Continue to raise the furnace temperature to 400-450°C at a speed of 2°C / min, ke...

Embodiment 3

[0036] (1) Choose Na 2 O-CaO-B 2 o 3 -SiO 2 Glass and Al 2 o 3 Powder is made into glass ceramic powder, of which glass accounts for 55% (101.1g), Al 2 o 3 Account for 45% (82.3 grams), mix with binder PVB, plasticizer DBP, solvent toluene, ball mill for 4 hours, and make slurry;

[0037] (2) casting the slurry into a green sheet, cutting it into a square, and punching;

[0038] (3) Print through-holes and wiring patterns layer by layer according to the designed pattern, wherein the through-hole conductor paste is Ag-Pd conductor paste, and the inner and outer surface graphics adopt Ag-Pt conductor paste;

[0039] (4) Laminate 10 green sheets in turn, and then place an Al with a thickness of 0.5 mm on the bottom and top of the stack. 2 o 3 The green sheet is hot-pressed at a temperature of 80°C-100°C and a pressure of 15MPa for 1 minute;

[0040] (5) Continue to raise the furnace temperature to 400-450°C at a speed of 3°C / min, keep the temperature for 30 minutes, and...

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Abstract

The present invention relates to a process for preparing zero-contractibility low-temp. cosintered ceramic multi-layer baseplate. Before the baseplate is sinerted, a pair of Al2O3 ceramic raw pieces is respectively pressed on the upper and lower surface of the baseplate blank, then the above-mentioned material is undergone the processes of hot-pressing, removing adhesive and sintering treatment so as to can obtain the invented product material. It can provide accurate conductor pattern for packaging process.

Description

technical field [0001] The invention relates to a preparation process of a low-temperature co-fired ceramic multilayer substrate, in particular to the preparation of a low-temperature co-fired ceramic multilayer substrate that does not shrink in X and Y directions, and belongs to the technical field of microelectronic packaging. Background technique [0002] Low Temperature Co-fired Ceramics (LTCC: Low Temperature Co-fired Ceramics) multilayer substrate is a multilayer ceramic substrate for three-dimensional wiring of high-density microelectronic packaging. At present, in the prior art, there have been extensive researches on low temperature co-fired ceramic multilayer substrates. Yuzo Shimada et al. introduced in "Low Temperature Constant MultilayerGlass-Ceramic Substrate With Ag-Pd Wiring for VLSI Package" (IEEE Transactions on Components, Hybrids, and Manufacturing Technology. vol 11, No. 1. March 1998, 163-170) The manufacturing process of low-temperature co-fired ceram...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/622H01L21/48H01L23/15
Inventor 田民波末广雅利
Owner TSINGHUA UNIV
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